Thermal resistance measurements on power transistors

Rubin, S.; Oettinger, Frank F.

doi:10.6028/nbs.sp.400-14

Cited by 12 publications

(5 citation statements)

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“…This means that a dozen or so per cent of the energy received from the power source is exchanged into heat. It is worth noticing that the difference between the considered courses T C (p) is the highest when the power is Ͻ3 W. It is convergent with the results of measurements of dependences of intensity of the emitted radiation on the forward current presented in previous papers (Górecki and Górecka, 2011;Rubin and Oettinger, 1979).…”

Section: Results Of Measurementssupporting

confidence: 90%

“…According to the classical definition, given, for example in Oettinger and Blackburn, 1990;Rubin and Oettinger, 1979;Blackburn, 2004, the thermal resistance R th of the semiconductor device is equal to the quotient of the excess of the junction temperature T j of this device over the temperature of the reference point T 0 through the thermal power P th dissipated in the device which caused this excess:…”

Section: Introductionmentioning

confidence: 99%

“…With regard to the manner by which the value of the temperature T j is obtained, one can distinguish two kinds of methods measuring the device thermal resistance. The first are optical (infrared) methods (Zarębski, 1996;Janke, 1992;Rubin and Oettinger, 1979), in which the value of the device inner temperature is obtained by measuring infrared radiation energy emitted by the investigated device (Górecki and Zarębski, 2003). The others are electrical methods, in which the information about the device internal temperature results from the measurements of the device temperature-sensitive parameter of the known temperature dependence.…”

Section: Introductionmentioning

confidence: 99%

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Measurements of thermal resistance of power LEDs

Górecki

2014

Microelectronics International

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Purpose -The purpose of this paper is to present a new method of measuring thermal resistance of power light-emitting diodes (LEDs). Properties of power LEDs strongly depend on their internal temperature. The value of this temperature depends on the cooling conditions characterized by thermal resistance. Design/methodology/approach -The new method of measuring the value of this parameter belongs to the group of electric methods. In this method, the problem of estimating the value of electrical power converted into light is solved. By comparing the values of the case temperature obtained for the LED operating in the forward mode and the reverse-breakdown mode, the thermal power is estimated. On the basis of the measured value of the thermally sensitive parameter (the LED forward voltage) and the estimated value of the thermal power, thermal resistance is calculated. Findings -The elaborated method was used to measure thermal resistance of the selected types of power LEDs operating at different cooling conditions. The correctness of the elaborated measurement method was proved by comparing the results of measurements obtained with the use of the new method and the infrared method. Research limitations/implications -On the basis of the obtained results of measurements and the catalog data of the tested diodes, the dependence of the measurement error of thermal resistance of the LED on its luminous efficiency is discussed. Originality/value -The new measurement method is easy to use and more accurate than the classical method of thermal resistance measurement of the diode.

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Section: Results Of Measurementssupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Measurements of thermal resistance of power LEDs

Górecki

2014

Microelectronics International

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“…According to the results of investigations presented in the literature, e.g. 7, 14, the thermal resistance between the interior of the device and the ambient is dependent on the power dissipated in the device. In order to characterize thermal properties of the MPS SiC diodes, the measurements of the thermal resistance R th of the diode IDT06S60C operating without the heat‐sink have been carried out in the special measuring set, presented in 15, 16, in the wide range of the ambient temperature and for different values of the power P H dissipated in the device.…”

Section: Modifications Of the Thermal Modelmentioning

confidence: 99%

Investigations of SiC merged pin Schottky diodes under isothermal and non‐isothermal conditions

Zarębski

Dąbrowski

2011

Int J Numerical Modelling

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SUMMARYThe paper concerns the problem of SPICE modeling of the merged pin Schottky (MPS) diodes. In the paper, the SPICE electrothermal model (ETM) of the SiC MPS diodes proposed by Infineon Technologies is investigated. The model was verified experimentally by comparing the calculated and the measured d.c. characteristics of the diode IDT06S60C. Some modifications of the model resulting in the improvement of its accuracy at d.c. analysis are proposed.

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“…Additionally, new parameters of merit, for example the large splitting of acoustic and optical phonon branches exemplified in boron arsenide 21 , are being reported at a rate of a handful per decade. To experimentally validate these predictions, consensus has emerged surrounding best practices for thermal property and transport characterization 22 , which eliminate most experimental artifacts and establish community-wide benchmarking 23 .…”

Section: Introductionmentioning

confidence: 99%

Machine Learning for Novel Thermal-Materials Discovery: Early Successes, Opportunities, and Challenges

Zhang¹,

Hippalgaonkar²,

Buonassisi³

et al. 2018

ES Energy Environ.

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High-throughput computational and experimental design of materials aided by machine learning have become an increasingly important field in material science. This area of research has emerged in leaps and bounds in the thermal sciences, in part due to the advances in computational and experimental methods in obtaining thermal properties of materials. In this paper, we provide a current overview of some of the recent work and highlight the challenges and opportunities that are ahead of us in this field. In particular, we focus on the use of machine learning and high-throughput methods for screening of thermal conductivity for compounds, composites and alloys as well as interfacial thermal conductance. These new tools have brought about a feedback mechanism for understanding new correlations and identifying new descriptors, speeding up the discovery of novel thermal functional materials.

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Thermal resistance measurements on power transistors

Cited by 12 publications

References 0 publications

Measurements of thermal resistance of power LEDs

Measurements of thermal resistance of power LEDs

Investigations of SiC merged pin Schottky diodes under isothermal and non‐isothermal conditions

Machine Learning for Novel Thermal-Materials Discovery: Early Successes, Opportunities, and Challenges

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