Thermal scene projectors using microemitters

Stauffer, Donald R.; Cole, Barry E.

doi:10.1117/12.55991

Cited by 4 publications

(1 citation statement)

References 4 publications

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“…Expressions were derived in I enabling the effective blackbody temperature difference Teff Teff T3 to be related generally to the actual temperature difference T = T -T, between the heated active zone and the sink (refer to Figs.6(a) and (b) below). In the special case where the temperature differences are small, it can readily be shown that L\TeffgaLT, (8) the constant of proportionality being the adive zone aflenuaiion coefficieni'2 g. This is defined in I for emissive projectors as the product ga=eaq (9) ofthe active zone attenuation factors; namely, the emissivity a, the effective fill factor qf, and the projector transmission coefficient, the latter being spectrally weighted by the signal radiance over the wavelength interval z\ = {, )2] of interest. 12 The relationship (8) follows immediately from the small signal proportionality between signal radiance and the product g ZT, g, being equal to unity when z\T = LTeff.…”

Section: Steady-state Conductionmentioning

confidence: 99%

<title>Thermal comparison of emissive infrared projector devices</title>

Williams

Reeves

1993

SPIE Proceedings

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The three emissive technologies -thin film resistor, silicon bridge resistor and suspended membrane resistor -currently being investigated for dynamic infrared projection applications are thermally compared and contrasted. It is shown that the technologies may be compared quantitatively in terms of both the strong power/speed trade-off that exists and the maximum effective blackbody temperature capability. The suspended membrane technology is shown to be superior in thermal terms, followed by the thin film technology which is found to be practical for high speed small array applications, or for large array applications provided that only small levels of effective blackbody temperature are required. In comparison, it is found that the capability of the silicon bridge technology is constrained in thermal terms both by the comparatively high thermal conductivity of silicon and by the small values of fill factor inherent to the technology.

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Section: Steady-state Conductionmentioning

confidence: 99%

<title>Thermal comparison of emissive infrared projector devices</title>

Williams

Reeves

1993

SPIE Proceedings

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Electro-thermal modelling of infrared microemitters using PSPICE

Kiran¹,

Karunasiri²

1999

Sensors and Actuators A: Physical

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Optical aspects of infrared projector technologies for hardware-in-the-loop simulation applications

1992

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The optical aspects of infrared projectors designed specifically for application within real-time hardware-in-theloop simulation systems are examined. Particular attention is paid to the form of the spatial frequency transfer function and thereby to the factors that affect the spatial resolution within the composite optical system defined by the infrared projector and the imaging unit under test. Expressions are also developed allowing the calculation of both the output signal radiance and effective blackbody temperature for reflective infrared projectors, thus enabling the direct comparison of the radiant output capabilities of projectors ofthe emissive and reflective types.

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Thermal scene projectors using microemitters

Cited by 4 publications

References 4 publications

<title>Thermal comparison of emissive infrared projector devices</title>

<title>Thermal comparison of emissive infrared projector devices</title>

Electro-thermal modelling of infrared microemitters using PSPICE

Optical aspects of infrared projector technologies for hardware-in-the-loop simulation applications

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