Thermal sensor employing ring oscillator composed of poly-Si thin-film transistors

6.2: Hybrid‐Type Temperature Sensors Using Thin‐Film Transistors: Characteristic Comparion of n, p., and Pin‐Type Transistors

“…The advantage of the T&C-type temperature sensor is that large temperature dependences of the off-leakage and subthreshold currents can be utilized, whereas the problem is that a voltage meter is required to measure the analog voltage, which is difficult to integrate using TFTs. Next, we developed a ring oscillator-type temperature sensor using TFTs [5]. The advantage of the ring oscillator-type temperature sensor is that only a digital circuit is required to count the digital pulse, whereas the problem is that the oscillation frequency is sometimes too fast to surely count.…”

Hybrid-Type Temperature Sensor Using Thin-Film Transistors

“…The advantage of the T&C-type temperature sensor is that large temperature dependences of the off-leakage and sub-threshold currents can be utilized, whereas the problem is that a voltage meter is required to measure the analog voltage, which is difficult to integrate using TFTs. Next, we developed a ring oscillator-type temperature sensor using TFTs [5]. The advantage of the ring oscillator-type temperature sensor is that only a digital circuit is required to count the digital pulse, whereas the problem is that the oscillator frequency is sometimes too fast to surely count.…”

Effect of Grain Growth Control by Atmospheric Micro-Thermal- Plasma-Jet Crystallization of Amorphous Silicon Strips on TFT Characteristics

“…Low temperature processed poly-silicon (LTPS) technology is quite promising in terms of high mobility (µ FE ), high reliability, and CMOS capability [2][3][4]. However, present LTPS technology, based excimer laser annealing (ELA) technique [5][6][7][8], must solve the cost and variability issues.…”

“…A 200-nm-thick un-doped a-Si film was formed on quartz substrate by plasmaenhanced chemical vapor deposition (PECVD) using SiH 4 and H 2 at 250 ºC. Dehydrogenation was carried out in N 2 ambient at 450 ºC for 1 hour.…”