Thermal stability of a magnetic domain wall in nanowires

Fukami, Shunsuke; Ieda, Jun’ichi; Ohno, Hideo

doi:10.1103/physrevb.91.235401

Cited by 25 publications

(33 citation statements)

References 35 publications

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“…To understand these intriguing behaviors, we analyzed the results in more detail. 123) It is known that the energy barrier E for DW depinning is given by 2M S H C0 V eff , 128) where H C0 is the intrinsic critical field, which was found to be inversely proportional to the wire width in our devices. V eff is the effective volume governing E. From the experimentally determined E, M S , and H C0 , V eff was obtained as shown in Fig.…”

Section: Current-induced Dw Motionmentioning

confidence: 70%

Magnetization switching schemes for nanoscale three-terminal spintronics devices

Fukami

Ohno

2017

Jpn. J. Appl. Phys.

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Utilizing spintronics-based nonvolatile memories in integrated circuits offers a promising approach to realize ultralow-power and high-performance electronics. While two-terminal devices with spin-transfer torque switching have been extensively developed nowadays, there has been a growing interest in devices with a three-terminal structure. Of primary importance for applications is the efficient manipulation of magnetization, corresponding to information writing, in nanoscale devices. Here we review the studies of current-induced domain wall motion and spin-orbit torque-induced switching, which can be applied to the write operation of nanoscale three-terminal spintronics devices. For domain wall motion, the size dependence of device properties down to less than 20 nm will be shown and the underlying mechanism behind the results will be discussed. For spin-orbit torque-induced switching, factors governing the threshold current density and strategies to reduce it will be discussed. A proof-ofconcept demonstration of artificial intelligence using an analog spin-orbit torque device will also be reviewed.

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Section: Current-induced Dw Motionmentioning

confidence: 70%

Magnetization switching schemes for nanoscale three-terminal spintronics devices

Fukami

Ohno

2017

Jpn. J. Appl. Phys.

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“…), we assume that all magnetic regions canted and bus are made of the same Co/Ni multilayers, with the same number of repetitions and the same thickness (2 nm). Such a material stack is known to be perpendicularly magnetized 20 . Therefore, two more steps have to be performed: first, cancel the out-of-plane anisotropy of the canted regions; second, create an in-plane anisotropy along the -axis in these regions.…”

Section: Resultsmentioning

confidence: 99%

Exchange-driven Magnetic Logic

Zografos

Manfrini

Vaysset

et al. 2017

Sci Rep

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Direct exchange interaction allows spins to be magnetically ordered. Additionally, it can be an efficient manipulation pathway for low-powered spintronic logic devices. We present a novel logic scheme driven by exchange between two distinct regions in a composite magnetic layer containing a bistable canted magnetization configuration. By applying a magnetic field pulse to the input region, the magnetization state is propagated to the output via spin-to-spin interaction in which the output state is given by the magnetization orientation of the output region. The dependence of this scheme with input field conditions is extensively studied through a wide range of micromagnetic simulations. These results allow different logic operating modes to be extracted from the simulation results, and majority logic is successfully demonstrated.

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“…It is also possible to create magnetic domains using the magnetic field generated by a conductive wire, where the flow of current generates a magnetic field. [88][89][90][91] In this study, several wires with nucleation pads were fabricated using EBL and a dry etching process. For the large electrodes, photolithography and deposition of Cr/Au were conducted.…”

Section: Synapses Based On Multilevel Magnetic Dwmentioning

confidence: 99%

Multistate Magnetic Domain Wall Devices for Neuromorphic Computing

Sbiaa

2021

Physica Rapid Research Ltrs

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In recent years, neuromorphic computing has been intensively investigated, to take over the conventional or von Neumann scheme. Herein, the advantages of memristors as neurons and synapses are discussed. After a brief introduction to biological neurons and synapses, focus is put on spin‐based devices, including magnetic tunnel junction (MTJ) and domain wall devices. Certain materials and device designs aim at mimicking synapses’ functionality, whereas others gather both neurons and synapses. The advancements in spin‐based memory applications are of great advantage for neuromorphic computing and their implementation is presented herein.

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Thermal stability of a magnetic domain wall in nanowires

Cited by 25 publications

References 35 publications

Magnetization switching schemes for nanoscale three-terminal spintronics devices

Magnetization switching schemes for nanoscale three-terminal spintronics devices

Exchange-driven Magnetic Logic

Multistate Magnetic Domain Wall Devices for Neuromorphic Computing

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