Thermal stability of Co, Ni, Pt or Ru Schottky contacts on n-Si and defects introduced thereon during contacts fabrication using electron beam deposition

Abstract

When using Schottky barrier diodes (SBDs) on silicon (Si) to study the thermal stability of radiation-induced defects, point defects injection into the silicon substrate can occur at temperatures where silicidation occurs. These injected point defects can react with the radiation-induced defects and may lead to an incorrect picture of annealing studies of these defects. In order to overcome this problem, we have annealed (1) ruthenium (Ru), cobalt (Co), nickel (Ni) and platinum (Pt) SBDs to form stable silicides on phosphorus (P) doped Si and (2) have measured the electrical characteristics of defects introduced during diodes fabrication by electron beam deposition (EBD), using conventional and

Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (100)

“…Although in previous studies focus has been on the reactions of germanium with Pd [6,[14][15][16][17][18][19][20][21][22][23], Pt [6,13,22,[24][25][26][27][28][29], and Ni [6,9,11,[13][14][15][16]22,[28][29][30][31][32][33][34][35][36][37][38], so far there is very little literature on reactions of germanium with Ir [39]. Gaudet et al [6] carried out a systematic study of thermally induced reaction of 20 transition metals with Ge substrates.…”