“…One is to use ionized PVD (I-PVD) techniques [1], an approach that has yielded low-temperature-deposited θ-, κ-, and γ-alumina films [2,3,4,5,6,7] with higher crystallinity than for conventional PVD, and has permitted growth of α-Al 2 O 3 at temperatures below 700 °C [8,9,10]. The second approach is to promote the nucleation of α-Al 2 O 3 either by a crystallographic template such as α-Cr 2 O 3 [11,12,13] or in solid solution α-(Cr,Al) 2 O 3 [14,15,16,17].…”