Thermal strain and stress in copper thin films

Vinci, Richard P.; Zielinski, E. M.; Bravman, J. C.

doi:10.1016/0040-6090(95)05834-6

Cited by 261 publications

(123 citation statements)

References 16 publications

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“…C), and the strong dependence of cY on film thickness h [ Fig. 12(a)] is typical for very thin metal films (Nix, 1989 ;Vinci et al, 1995). The stress in the copper film by itself does not lead to delamination.…”

Section: An Applicationmentioning

confidence: 98%

Nonlinear delamination mechanics for thin films

Wei

Hutchinson

1997

Journal of the Mechanics and Physics of Solids

145

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Delaminationof prestressed thin films on thick substrates is analysed accounting for plastic dissipation in either the substrate or film. Emphasis is on large scale yielding wherein the height of the plastic zone at the propagating interface crack tip is comparable to the film thickness. Such conditions are common for both metal and polymer thin films on elastic substrates or for ceramic coatings on metal substrates when the interface between the film and substrate is reasonably strong. Under large scale yielding, the notion of a thickness-independent interface toughness no longer pertains, and a nonlinear fracture mechanics is required to quantify delamination.Two such approaches are pursued in this paper using models based on the attainment of critical conditions at the interface crack tip within the plastic zone. Steady-state film delamination is analysed for conditions where yielding occurs either in the film or in the substrate, and critical combinations of prestress and thickness are predicted. The theory is applied to a recent set of experiments on copper films delaminating from silica substrates. r{Tj 1997

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Section: An Applicationmentioning

confidence: 98%

Nonlinear delamination mechanics for thin films

Wei

Hutchinson

1997

Journal of the Mechanics and Physics of Solids

145

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“…In this case, stress can be imposed on the film by changing the temperature of the system. [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] The constraint of the substrate implies that the generated thermal strain is essentially offset by the generation of some combination of elastic and plastic strain in the film. If is the equi-biaxial stress in the film, and p is the equi-biaxial plastic strain, then rates of change are related by /M ϩ p ϩ (␣ film Ϫ ␣ sub )Ṫ 0,…”

Section: Measuring Plastic Deformationmentioning

confidence: 99%

Dislocation Plasticity in Thin Metal Films

Kraft¹,

Freund²,

Phillips³

et al. 2002

MRS Bull.

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This article describes the current level of understanding of dislocation plasticity in thin films and small structures in which the film or structure dimension plays an important role. Experimental observations of the deformation behavior of thin films, including mechanical testing as well as electron microscopy studies, will be discussed in light of theoretical models and dislocation simulations. In particular, the potential of applying strain-gradient plasticity theory to thin-film deformation is discussed. Although the results of all studies presented follow a "smaller is stronger" trend, a clear functional dependence has not yet been established.

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“…The precision wafer curvature technique is an extension of the wafer curvature technique that has been used extensively for stress measurement in thin films and periodic line structures [10][11][12]. The measurement system is set up based on an optical lever with a capability to measure the curvature to a precision of 6.5×10 -5 m -1 .…”

Section: Precision Wafer Curvature Techniquementioning

confidence: 99%

Thermomechanical characterization and modeling for TSV structures

Jiang

Ryu

Zhao

et al. 2014

AIP Conference Proceedings

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Abstract. Continual scaling of devices and on-chip wiring has brought significant challenges for materials and processes beyond the 32-nm technology node in microelectronics. Recently, three-dimensional (3-D) integration with through-silicon vias (TSVs) has emerged as an effective solution to meet the future technology requirements. Among others, thermo-mechanical reliability is a key concern for the development of TSV structures used in die stacking as 3-D interconnects. This paper presents experimental measurements of the thermal stresses in TSV structures and analyses of interfacial reliability. The micro-Raman measurements were made to characterize the local distribution of the near-surface stresses in Si around TSVs. On the other hand, the precision wafer curvature technique was employed to measure the average stress and deformation in the TSV structures subject to thermal cycling. To understand the elastic and plastic behavior of TSVs, the microstructural evolution of the Cu vias was analyzed using focused ion beam (FIB) and electron backscattering diffraction (EBSD) techniques. Furthermore, the impact of thermal stresses on interfacial reliability of TSV structures was investigated by a shear-lag cohesive zone model that predicts the critical temperatures and critical via diameters.

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Thermal strain and stress in copper thin films

Cited by 261 publications

References 16 publications

Nonlinear delamination mechanics for thin films

Nonlinear delamination mechanics for thin films

Dislocation Plasticity in Thin Metal Films

Thermomechanical characterization and modeling for TSV structures

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