Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs

Shaneyfelt, M.R.; Schwank, J.R.; Witczak, S.C.; Fleetwood, D.M.; Pease, R.L.; Winokur, P.S.; Riewe, L.C.; Hash, G.L.

doi:10.1109/23.903805

Cited by 85 publications

(20 citation statements)

References 31 publications

(34 reference statements)

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“…As stated earlier, the initial experiments showed that PETS and LITB may be associated with ELDRS [9]. Later experiments showed that ELDRS could be eliminated by removing the silicon nitride passivation layer [9,30]. This layer, present on all bipolar devices, protects the underlying silicon dioxide from contaminants.…”

Section: Early Stagesmentioning

confidence: 85%

“…An initial project, using Research Foundation support, had concluded that a hydrogen dimerization mechanism might explain ELDRS [7,8]. Another project, funded by the DTRA to look at microelectronics in spacecraft and satellites, found that ELDRS often occurred in parts that exhibit two other effects, pre-irradiation elevated thermal stress (PETS) sensitivity and latent interface trap buildup (LITB) [9]. These phenomena seemed to be occurring in similar technologies and were possibly related by underlying physical mechanisms.…”

Section: Radiation Aging Of Stockpile and Space-based Microelectronicmentioning

confidence: 99%

See 1 more Smart Citation

Radiation aging of stockpile and space-based microelectronics.

Hembree¹,

Hjalmarson²

2004

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This report describes an LDRD-supported experimental-theoretical collaboration on the enhanced low-dose-rate sensitivity (ELDRS) problem. The experimental work led to a method for elimination of ELDRS, and the theoretical work led to a suite of bimolecular mechanisms that explain ELDRS and is in good agreement with various ELDRS experiments. The model shows that the radiation effects are linear in the limit of very low dose rates. In this limit, the regime of most concern, the model provides a good estimate of the worst-case effects of low dose rate ionizing radiation.

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Section: Early Stagesmentioning

confidence: 85%

Section: Radiation Aging Of Stockpile and Space-based Microelectronicmentioning

confidence: 99%

Radiation aging of stockpile and space-based microelectronics.

Hembree¹,

Hjalmarson²

2004

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“…1 [3]. This figure shows the comparison of the degradation of LM111 comparators after irradiation at low dose rate and after irradiation at high dose rate followed by room temperature anneal (the total time of high dose rate irradiation and anneal was equal to the time of low dose rate irradiation).…”

Section: Introductionmentioning

confidence: 98%

Influence of temperature and dose rate on the degradation of BiCMOS operational amplifiers during total ionizing dose testing

Petrov

Tapero

Ulimov

2014

Microelectronics Reliability

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“…Понятие TDRE подразумевает, что степень деградации по окончании длитель-ного низкоинтенсивного облучения отличается от степени деградации при высокоинтенсивном облучении до того же уровня дозы с после-дующим отжигом при комнатной температуре, если при этом сум-марное время высокоинтенсивного облучения и отжига совпадает с длительностью низкоинтенсивного облучения. Аналоговые биполяр-ные приборы и микросхемы могут быть чувствительны к TDRE [1][2][3][4][5][6][7][8]. Это проявляется в повышенной чувствительности к воздействию низкоинтенсивного ионизирующе-го излучения (ELDRS -enhanced low dose rate sensitivity).…”

Section: Introductionunclassified

“…наук (1), доцент кафедры полупро-водниковой электроники и физики полупроводников (2), e−mail: tapero@bk.ru; Петров А. С. 2 -ведущий инженер; Улимов Виктор Николаевич 2 -доктор техн. наук, профессор.…”

Section: Introductionunclassified