Thermal transport properties of graphene-based ferromagnetic/singlet superconductor/ferromagnetic junctions

Salehi, Morteza; Alidoust, Mohammad; Rahnavard, Yousef; Rashedi, Gholamreza

doi:10.1063/1.3452364

Cited by 24 publications

(19 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thermal conductance (TC) has been investigated in graphene based hybrid junctions in Ref. [38][39][40][41] where due to low-energy relativistic nature of Dirac fermions in graphene, TC exhibits oscillatory behavior with respect to the barrier strength. Such oscillatory behavior of TC is in sharp contrast to that of the conventional NS junction 42,43 where TC decays with the barrier strength.…”

Section: Introductionmentioning

confidence: 99%

Thermal conductance by Dirac fermions in a normal-insulator-superconductor junction of silicene

2016

View full text Add to dashboard Cite

We theoretically study the properties of thermal conductance in a normal-insulatorsuperconductor junction of silicene for both thin and thick barrier limit. We show that while thermal conductance displays the conventional exponential dependence on temperature, it manifests a nontrivial oscillatory dependence on the strength of the barrier region. The tunability of the thermal conductance by an external electric field is also investigated. Moreover, we explore the effect of doping concentration on thermal conductance. In the thin barrier limit, the period of oscillations of the thermal conductance as a function of the barrier strength comes out be π/2 when doping concentration in the normal silicene region is small. On the other hand, the period gradually converts to π with the enhancement of the doping concentration. Such change of periodicity of the thermal response with doping can be a possible probe to identify the crossover from specular to retro Andreev reflection in Dirac materials. In the thick barrier limit, thermal conductance exhibits oscillatory behavior as a function of barrier thickness d and barrier height V0 while the period of oscillation becomes V0 dependent. However, amplitude of the oscillations, unlike in tunneling conductance, gradually decays with the increase of barrier thickness for arbitrary height V0 in the highly doped regime. We discuss experimental relevance of our results.

show abstract

Section: Introductionmentioning

confidence: 99%

Thermal conductance by Dirac fermions in a normal-insulator-superconductor junction of silicene

2016

View full text Add to dashboard Cite

show abstract

“…In fact, similar expressions of the energy current in 1D topological-trivial metal superconductor junctions have been obtained by a rigorous derivation through linear response of entropy production 22 or by a heuristic argument 23 . The latter was then applied to the superconducting graphene systems 24,25 . It is worth emphasizing that all the transports considered in this work are charge neutral, i.e., the carriers transport only thermal energy without charge current.…”

mentioning

confidence: 99%

Anomalous energy transport across topological insulator superconductor junctions

Ren

Zhu

2013

Phys. Rev. B

View full text Add to dashboard Cite

We study the nonequilibrium energy transport across a topological insulator/superconductor junction, by deriving an interfacial heat current formula through scattering wave approach. Several anomalous thermal properties are uncovered, such as thermal energy's Klein tunneling, asymmetric Kapitza resistance and negative differential thermal resistance. We expect these findings could have potential applications for the energy control in various hybridized mesoscopic systems.

show abstract

“…The thermal conductance can also be increased or decreased with respect to the temperature, depending on the strength of the exchange field in F region. We further demonstrate that in contrast to the graphene-based F/S/F structure [20], the thermal conductance displays a maximum value with respect to the exchange field at h < λ, which moves towards larger exchange fields by increasing the temperature. This paper is organized as follows.…”

Section: Arxiv:14021840v2 [Cond-matmes-hall] 7 Oct 2014mentioning

confidence: 98%

“…Furthermore, Linder et al [18] have recently demonstrated a fully spin×valley polarized pure CAR process (with sτ = −1, where s and τ indicate the spin and valley degrees of freedom) in silicene-based N/S/N structure which means that the nonlocal current is fully spin-polarized in each valley. Moreover, there has been many studies on the transport of charge, spin, and heat through the hybrid structures of normal, ferromagnetic and superconducting graphene [19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Valley- and spin-switch effects in molybdenum disulfide superconducting spin valve

Majidi

Asgari

2014

Phys. Rev. B

View full text Add to dashboard Cite

We propose a hole-doped molybdenum disulfide (MoS2) superconducting spin valve (F/S/F) hybrid structure in which the Andreev reflection process is suppressed for all incoming waves with a determined range of the chemical potential in ferromagnetic (F) region and the cross-conductance in the right F region depends crucially on the configuration of magnetizations in the two F regions. Using the scattering formalism, we find that the transport is mediated purely by elastic electron cotunneling (CT) process in a parallel configuration and changes to the pure crossed Andreev reflection (CAR) process in the low-energy regime, without fixing of a unique parameter, by reversing the direction of magnetization in the right F region. This suggests both valley-and spin-switch effects between the perfect elastic CT and perfect CAR processes and makes the nonlocal charge current to be fully valley-and spin-polarized inside the right F region where the type of the polarizations can be changed by reversing the magnetization direction in the right F region. We further demonstrate that the presence of the strong spin-orbit interaction λ and an additional topological term (β) in the Hamiltonian of MoS2 result in an enhancement of the charge conductance of the CT and CAR processes and make them to be present for long lengths of the superconducting region. Besides, we find that the thermal conductance of the structure with a small length of the highly doped superconducting region exhibits linear dependence on the temperature at low temperatures whereas it enhances exponentially at higher temperatures. In particular, we demonstrate that the thermal conductance versus the strength of the exchange field (h) in F region displays a maximum value at h < λ, which moves towards larger exchange fields by increasing the temperature.

show abstract

Thermal transport properties of graphene-based ferromagnetic/singlet superconductor/ferromagnetic junctions

Cited by 24 publications

References 34 publications

Thermal conductance by Dirac fermions in a normal-insulator-superconductor junction of silicene

Thermal conductance by Dirac fermions in a normal-insulator-superconductor junction of silicene

Anomalous energy transport across topological insulator superconductor junctions

Valley- and spin-switch effects in molybdenum disulfide superconducting spin valve

Contact Info

Product

Resources

About