Thermally Activated Point Defect Migration in Copper

Cyclotron Resonance in Thallium

“…The band structure and Fermi surface (FS) of Tl has been shown from theoretical considerations to bear a close resemblance to the "free-electron" model with the departures from this model being due to effects of the finite crystal potentials and spin-orbit coupling. 2 Prior experimental studies [3][4][5][6][7][8] of the FS of thallium have shown general agreement with this hypothesis. The present measurements were performed to supplement the previous knowledge of the FS of Tl by providing information about the anisotropy of effective mass of carriers in the different energy bands as a function of crystallographic directions.…”

“…Magnetoresistance measurements 3,4 have provided qualitative information about the topology of the thallium FS and about the energy gaps in the band structure. Details of the structure of the FS have been reported from studies of the magnetoacoustic effect 5-7 and the de Haas-van Alphen effect.…”

The Effects of Defect Doping on Low Temperature Neutron‐Irradiation Damage and Recovery in Aluminium and Platinum

“…The suppression of stage I in electronirradiated Cu [27] could be due to the conversion of one type of interstitial (the 110 configuration) to another type (the 100 configuration) during the annealing process. The conversion could also occur dynamically during the irradiation, and no damage rate enhancement would result.…”

“…At the same time, the distribution of defects may be changed in two ways: (a) The defect concentration in a disordered region produced by a high energy knock-on atom can become greater because the range of collision chains and channeled atoms is reduced ; and (p) the concentration of close Frenkel pairs, defect-impurity pairs, and small defect clusters can be increased by defocusing of collision chains a t doped defects. Finally, the configuration of interstitial-type defects could be altered; for example, a dynamic crowdion might be converted to a normal split interstitial when it meets a dislocation or impurity atom [27]. These possibilities have been discussed often in the literature [l to 8, 27 to 401, but it should be mentioned that the importance of collision sequences and channeled atoms in irradiation damage has also been questioned [ 11, 12,281.…”

The relation between the dislocation density and resistivity increment during low temperature irradiation of FCC metals

“…Subthreshold events contribute about 2 % to the total damage in the irradiations of the annealed specimens of Ref. (14); this cont'ribution is probably not increased by more than a factor of two by deformation. '26'…”