Thermally-assisted Ti/Pr&lt;inf&gt;0.7&lt;/inf&gt;Ca&lt;inf&gt;0.3&lt;/inf&gt;MnO&lt;inf&gt;3&lt;/inf&gt; ReRAM with excellent switching speed and retention characteristics

Jung, Seung Min; Siddik, Manzar; Lee, Wootae; Park, Jubong; Liu, Xinjun; Woo, Jiyong; Choi, Gahyun; Lee, Joonmyoung; Lee, Nodo; Jang, Yun Hee; Hwang, Hyunsang

doi:10.1109/iedm.2011.6131483

Cited by 11 publications

(6 citation statements)

References 6 publications

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“…Pr 1– x Ca x MnO 3 (PCMO)-based resistance random access memory (RRAM) has attracted widespread attention in cross-bar memory and neuromorphic applications as it enables multiple nonvolatile resistance states and forming-less operation along with excellent endurance and retention. − Further, the area-scaling capability in PCMO enables high-density arrays required for large-scale computation.…”

Section: Introductionmentioning

confidence: 99%

Understanding the Region of Resistance Change in Pr_0.7Ca_0.3MnO₃ RRAM

Lashkare

Saraswat

Ganguly

2020

ACS Appl. Electron. Mater.

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Pr1–x Ca x MnO3 (PCMO)-based resistance random access memory (RRAM) is attractive in large-scale memory and neuromorphic applications as it is nonfilamentary and area scalable and has multiple resistance states along with excellent endurance and retention. The PCMO RRAM exhibits area-scalable resistive switching when in contact with the reactive electrode. The interface redox reaction-based resistance switching is observed electrically. Yet, whether the resistance change occurs near the reactive interface or spread over the entire bulk is largely debated. Essentially, a two-terminal device is unable to provide direct evidence of the resistance change region in the PCMO RRAM. In this paper, we propose and experimentally demonstrate a three-terminal RRAM (3T-RRAM) device in which a thin third terminal (∼20 nm) is inserted laterally in close proximity to a typical vertical two-terminal RRAM device of PCMO thickness ∼80 nm. It is well known that the reactive interface participates in the resistive switching. However, using the 3T-RRAM, we demonstrate that the resistance change also occurs in the region near the inert electrode. We further show that the resistance measured by T3 is exclusively sensitive to the region near the inert electrode as opposed to the reactive electrode. Finally, the highly symmetric space charge limited current (SCLC) characteristics with polarity at various resistance levels, typical of two-terminal RRAM, are undisturbed because of the slightly adjacent placement of the nanoscale inert third terminal while providing resistance change read sensitivity. It is the first time that an interface redox and bulk SCLC-based resistance change has been experimentally shown as correlated and consistent, enabled by the third terminal of the RRAM. Such a study details a critical understanding of the device which can enable the design and development of PCMO RRAM for large memory and neuromorphic computing applications.

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Section: Introductionmentioning

confidence: 99%

Understanding the Region of Resistance Change in Pr_0.7Ca_0.3MnO₃ RRAM

Lashkare

Saraswat

Ganguly

2020

ACS Appl. Electron. Mater.

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“…Recently, forming-free operation has been achieved by adopting thin oxide multi-layers in cell structures. 67) With the use of thin oxide layers, a large electric field can be applied to the oxide layer, in which a resistive change takes place, by the low voltage that is required for the forming process.…”

Section: Reramsmentioning

confidence: 99%

Review of Emerging New Solid-State Non-Volatile Memories

Fujisaki

2013

Jpn. J. Appl. Phys.

114

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The integration limit of flash memories is approaching, and many new types of memory to replace conventional flash memories have been proposed. Unlike flash memories, new nonvolatile memories do not require storage of electric charges. The possibility of phase-change randomaccess memories (PCRAMs) or resistive-change RAMs (ReRAMs) replacing ultrahigh-density NAND flash memories has been investigated; however, many issues remain to be overcome, making the replacement difficult. Nonetheless, ferroelectric RAMs (FeRAMs) and magnetoresistive RAMs (MRAMs) are gradually penetrating into fields where the shortcomings of flash memories, such as high operating voltage, slow rewriting speed, and limited number of rewrites, make their use inconvenient. For instance, FeRAMs are widely used in ICs that require low power consumption such as smart cards and wireless tags. MRAMs are used in many kinds of controllers in industrial equipment that require high speed and unlimited rewrite operations. For successful application of new non-volatile semiconductor memories, such memories must be practically utilized in new fields in which flash memories are not applicable, and their technologies must be further developed.

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“…However, for practical problem sizes, each neuron may need millions of reinstantiations, and thus switching endurance and cycle-to-cycle variations in programming are of critical importance. An endurance of up to 10 6 switching cycles has been demonstrated for PCMO RRAM by means of engineering memory window, adding capping layers or changing ionic composition . This level of endurance per neuron is sufficient to solve a million nodes problem thousands of times .…”

Section: Introductionmentioning

confidence: 99%

Highly Deterministic One-Shot Set–Reset Programming Scheme in PCMO Resistive Random-Access Memory

Phadke

Saraswat

Ganguly

2022

ACS Appl. Electron. Mater.

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Resistive random-access memory (RRAM) devices are very versatile with applications ranging from digital nonvolatile memories to analog synapses and integrate-fire neurons. Recently, RRAM based stochastic neurons have also been proposed for optimization networks that solve NP-hard problems. These applications rely on reliably writing a given conductance state repeatedly. A Pr1–x Ca x MnO3 (PCMO) based RRAM device is a nonfilamentary, bulk switching RRAM which demonstrates low device-to-device variations compared to filamentary RRAMs. However, a low complexity programming scheme to demonstrate low cycle-to-cycle variations (C2CV) as well is needed. In this work, we propose a one-shot Set (initialize) and Reset (program) scheme to experimentally demonstrate low C2CV (<15%) for multiple devices. Compared to one-shot programming on a filamentary device, there is a 2–4× increment in the number of levels that can be stored per device using PCMO RRAM. Further, one-shot programming in PCMO RRAM leads to a 35× (10×) reduction in the number of pulses for 3 (2) bits per device, respectively. This greatly simplifies the memory controller design for these devices compared to any iterative write-verify schemes. This scheme gives a further insight into the self-heating limited Set operation controlled by a series resistor while reinforcing the analog and precise nature of the Reset operation. We studied the impact of the C2CV in programming RRAM-based stochastic neurons on the Max-Cut optimization problem using Boltzmann machines. PCMO RRAM combined with the one-shot programming scheme emerges as the clear choice for a well-controlled RRAM device with minimal peripheral complexity.

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Thermally-assisted Ti/Pr<inf>0.7</inf>Ca<inf>0.3</inf>MnO<inf>3</inf> ReRAM with excellent switching speed and retention characteristics

Cited by 11 publications

References 6 publications

Understanding the Region of Resistance Change in Pr_0.7Ca_0.3MnO₃ RRAM

Understanding the Region of Resistance Change in Pr_0.7Ca_0.3MnO₃ RRAM

Review of Emerging New Solid-State Non-Volatile Memories

Highly Deterministic One-Shot Set–Reset Programming Scheme in PCMO Resistive Random-Access Memory

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Thermally-assisted Ti/Pr<inf>0.7</inf>Ca<inf>0.3</inf>MnO<inf>3</inf> ReRAM with excellent switching speed and retention characteristics

Cited by 11 publications

References 6 publications

Understanding the Region of Resistance Change in Pr0.7Ca0.3MnO3 RRAM

Understanding the Region of Resistance Change in Pr0.7Ca0.3MnO3 RRAM

Review of Emerging New Solid-State Non-Volatile Memories

Highly Deterministic One-Shot Set–Reset Programming Scheme in PCMO Resistive Random-Access Memory

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Product

Resources

About

Understanding the Region of Resistance Change in Pr_0.7Ca_0.3MnO₃ RRAM

Understanding the Region of Resistance Change in Pr_0.7Ca_0.3MnO₃ RRAM