Thermally grownSi3N4thin films on Si(100): Surface and interfac

Preparation and properties of clean Si3N4 surfaces

“…For the main N 1s and Si 2s peaks, the fits used G L values fixed at those obtained in fits to higher-resolution data for these lines. From the resulting I N 1s /I Si 2s ratio an estimate of C N =C Si ¼ 1:21 AE 0:04 (average of five runs on two samples) was found, 4 which is reasonably close to the ideal value of 1.33 given the uncertainty in the sensitivity factors [73].…”

“…The lack of Si-Si bonding is consistent with the Si LVV spectrum discussed above. These results argue against the presence of a surface layer resembling elemental Si, as was seen [4] in surface-sensitive XPS for Si 3 N 4 grown in situ on Si(1 0 0) by reaction with NH 3 .…”

“…For Si 3 N 4 films grown by low-pressure chemical vapor deposition (LPCVD) on Si(1 0 0), cleaning by Ar þ -ion bombardment followed by annealing in UHV was found, using ISS [3], to leave the surface almost free of oxygen and terminated in Si. Si 3 N 4 films grown in situ on Si(1 0 0) or (1 1 1) surfaces by exposure to NH 3 at high temperature were also found [4,5] to be terminated in a Si-rich layer. However, recent work [6] using high-resolution XPS for Si(1 1 1) surfaces nitrided with NH 3 has indicated an abruptly-terminated and stoichiometric Si 3 N 4 surface.…”

Microwave Plasma Process for SiCN:H Thin Films Synthesis with Composition Varying from SiC:H to SiN:H in H2/N2/Ar/Hexamethyldisilazane Gas Mixture

“…The decomposition was done by imposing an energy splitting of 0.6 eV and a relative intensity ratio of 2:1 between Si(2p) 3/2 and Si(2p) 1/2 components. [28] We made a total and complete decomposition of the O1s, Si2p, N1s and C1s peaks extracted from high resolution XPS spectra. In order to compare a component of one signal to the component of another, we used constraints to fit the data so as to set as equal the amount of Si2p-C1s and C1s-Si2p bonds, and we did the same for Si2p-N1s/N1s-Si2p and for N1s-C1s/C1s-N1s.…”

X-ray photoelectron spectroscopy study of silicon interlayer based surface passivation for AlGaAs/GaAs quantum structures on (111) B surfaces

“…The peak could be decomposed into two components, i.e., the Si-Si bond component and the Si-N bond component. They showed a chemical shift smaller than that for Si 3 N 4 [9], which indicated formation of a Si-rich SiN layer.…”