1995
DOI: 10.1117/12.200276
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Thermally induced structural and phase transformations of Mo-Si and MoSi 2 -Si x-ray multilayer mirrors

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Cited by 6 publications
(3 citation statements)
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“…higher 700 K. The change of structural state for Si-layers approaching the hole edge also points to a temperature gradient. It is known that crystallization of a-Si depends on annealing time and a contacting metal, and may occur in a wide temperature range of 450-1220 K. [41][42][43][44][45] During thermal annealing of MoSi 2 /Si and Sc/Si multilayers 46,47 we also observed the crystallization of a-Si at temperatures of ~1000 K and ~970 K, respectively. As it is a fast-running process we can expect that the temperature in the region of ~18 μm wide surrounding the holes (c-Si is present) reached at least 1000 K, and in the adjoining region of several microns wide the temperature is ~300 degrees lower.…”
Section: Resultsmentioning
confidence: 84%
“…higher 700 K. The change of structural state for Si-layers approaching the hole edge also points to a temperature gradient. It is known that crystallization of a-Si depends on annealing time and a contacting metal, and may occur in a wide temperature range of 450-1220 K. [41][42][43][44][45] During thermal annealing of MoSi 2 /Si and Sc/Si multilayers 46,47 we also observed the crystallization of a-Si at temperatures of ~1000 K and ~970 K, respectively. As it is a fast-running process we can expect that the temperature in the region of ~18 μm wide surrounding the holes (c-Si is present) reached at least 1000 K, and in the adjoining region of several microns wide the temperature is ~300 degrees lower.…”
Section: Resultsmentioning
confidence: 84%
“…We note that such bilayers can degrade due to coating contamination, partial evaporation, etc. The previously reported study presented some results of temperature damage of Mo/Si bilayer with formation of molybdenum silicides [5]. The high pressure plasma light sources emit such high broadband radiation fluxes which are characterized by a global temperature and stress fields in the irradiated substrates.…”
Section: Introductionmentioning
confidence: 97%
“…However, we note a lack of data on the damage and degradation of the multilayers under such radiation fluxes. The multiplicity of the physical processes includes nonstationary heat transfer in thin films [35], physicochemical transformations [36], coating evaporation [11], uncertainties of optical properties in the UV/VUV range, etc. These circumstances dictate the need for close experimental studies of the processes, both gasdynamic responses from the irradiated materials and material science aspects of the coating degradation.…”
Section: Introductionmentioning
confidence: 99%