2006 International Electron Devices Meeting 2006
DOI: 10.1109/iedm.2006.346729
|View full text |Cite
|
Sign up to set email alerts
|

Thermally Robust Multi-layer Non-Volatile Polymer Resistive Memory

Abstract: The feasibility of the charge-transfer based polymer resistive memory as a future data storage device was tested using a thermally robust polyimide and PCBM composite film, available by low-cost solution processing. The prototype device with a simple 4F 2 cross-point cell structure demonstrated basic non-volatile memory functions (> 1000 write/erase cycles and 1-week data retention in an ambient without encapsulation). Not only bi-polar but also uni-polar operation scheme with multi-level programming worked fo… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
13
0

Year Published

2009
2009
2011
2011

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 14 publications
(13 citation statements)
references
References 7 publications
0
13
0
Order By: Relevance
“…This features the typical unipolar resistive switching that is only voltage-magnitude dependent but not polarity dependent. It should be noted that some resistive-switching systems 32,33 were presented similarly in both polarities, but these are essentially unipolar behaviors as described in Figure 4b.…”
Section: Articlementioning
confidence: 88%
“…This features the typical unipolar resistive switching that is only voltage-magnitude dependent but not polarity dependent. It should be noted that some resistive-switching systems 32,33 were presented similarly in both polarities, but these are essentially unipolar behaviors as described in Figure 4b.…”
Section: Articlementioning
confidence: 88%
“…[19] In addition, multilevel cells and multilayer stacking structures have been proposed to achieve high data-storage densities. [20][21][22][23] In spite of the extensive fundamental research on polymer memory devices, there have been little publications related to integrated polymer memory devices consisting of switch (transistor or diode) and memory (resistor) components. When polymer nonvolatile memory devices are scaled down and fabricated in a cross-point-type array structure, switch components, such as transistors or diodes, are indispensable to prevent unexpected crosstalk.…”
mentioning
confidence: 99%
“…Recently, Samsung (Cho et al 2006) demonstrated that by blending polyimide with [6, 6]-phenyl-C61 butyric acid methyl ester, a thermally robust polymer memory could be realized. A first demonstration of a two-layer stacked device was fabricated using the composite film.…”
Section: (B) Thermally Cured Polyimide Compositementioning
confidence: 99%
“…So far, three different approaches Cho et al 2006;Kwan et al 2007) have been applied to polymer memory devices. In the next section, we will discuss the relative merits of these three methods.…”
Section: Introductionmentioning
confidence: 99%