Thermally Robust Perpendicular SOT-MTJ Memory Cells With STT-Assisted Field-Free Switching

Tsou, Ya-Jui; Chen, Wei-Jen; Shih, Hsin-Nung; Liu, Pang Chun; Liu, C. W.; Li, Kai Shin; Shieh, Jia Min; Yen, Yu Shen; Lai, Chun‐Liang; Wei, Jeng−Hua; Tang, D.D.; Sun, J.Y.-C.

doi:10.1109/ted.2021.3110833

Cited by 8 publications

(2 citation statements)

References 15 publications

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“…As the annealing temperature increases, the bcc (001)-CoFe texture gradually forms, which also affects the crystallization process of the [Co/Pt] m /Ru/[Co/Pt] n above. Therefore, ordinary top-pinned MTJ stacks are unable to withstand BEOL annealing temperatures of 400 • C. To address this issue, researchers propose ways to optimize the film layers respectively, such as growing a spacer layer that will not destroy the coupling between the SAF and CoFeB reference layer, or strengthening the crystallization of fcc (111)-Pt through surface modification treatment before annealing [70][71][72].…”

Section: Temperature Dependence Of Tmrmentioning

confidence: 99%

Tunneling magnetoresistance materials and devices for neuromorphic computing

et al. 2023

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Artificial intelligence has become indispensable in modern life, but its energy consumption has become a significant concern due to its huge storage and computational demands. Artificial intelligence algorithms are mainly based on deep learning algorithms, relying on the backpropagation of convolutional neural networks or binary neural networks. While these algorithms aim to simulate the learning process of the human brain, their low bio-fidelity and the separation of storage and computing units lead to significant energy consumption. The human brain is a remarkable computing machine with extraordinary capabilities for recognizing and processing complex information while consuming very low power. Tunneling magnetoresistance (TMR)-based devices, namely magnetic tunnel junctions (MTJs), have great advantages in simulating the behavior of biological synapses and neurons. This is not only because MTJs can simulate biological behavior such as Spike-Timing Dependent Plasticity(STDP) and Leaky Integrate-Fire(LIF), but also because MTJs have intrinsic stochastic and oscillatory properties. These characteristics improve MTJs' bio-fidelity and reduce their power consumption. MTJs also possess advantages such as ultrafast dynamics and non-volatile properties, making them widely utilized in the field of neuromorphic computing in recent years. We conducted a comprehensive review of the development history and underlying principles of TMR, including a detailed introduction to the material and magnetic properties of MTJs and their temperature dependence. We also explored various writing methods of MTJs and their potential applications. Furthermore, we provided a thorough analysis of the characteristics and potential applications of different types of MTJs for neuromorphic computing. TMR-based devices have demonstrated promising potential for broad application in neuromorphic computing, particularly in the development of spiking neural networks. Their ability to perform on-chip learning with ultra-low power consumption makes them an exciting prospect for future advances in the era of the Internet of Things.

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Section: Temperature Dependence Of Tmrmentioning

confidence: 99%

Tunneling magnetoresistance materials and devices for neuromorphic computing

et al. 2023

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“…The SAFs have been extensively used as the pinning layer in magnetic tunnel junctions (MTJs) [12,13], which are indispensable for sensors [14] and magnetoresistive randomaccess memory (MRAM) [15]. In order to reduce the cell size of MTJs and increase the MRAM density, the SAFs are also proposed to be used as the free layer of MTJ [16,17].…”

Section: Introductionmentioning

confidence: 99%

Unusual spin–orbit torque switching in perpendicular synthetic antiferromagnets with strong interlayer exchange coupling

Luo¹,

Wang²,

Liu³

et al. 2023

J. Phys.: Condens. Matter

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Synthetic antiferromagnet (SAF) is an outstanding system for controlling magnetic coupling via tuning the layer thickness and material composition. Here, we control the interlayer exchange coupling (IEC) in a perpendicularly magnetized SAF Pt/Co/Ir/CoFeB/MgO multilayer, which is tuned by varying the nonmagnetic layer Ir thickness and the magnetic layer Co thickness. And we study the spin-orbit torque (SOT) driven magnetization switching of the SAF. In the SAF with a weak IEC, the SOT-driven switching behavior is similar to that of a single ferromagnets system, which is dominated by the external magnetic field. In contrast, in the SAF with an ultra-strong IEC, the saturation magnetic field is large than 50 kOe, and the SOT-driven switching behavior is decided by the effective magnetic field. The effective field is correlated to the external magnetic field, the IEC field, magnetic moments of CoFeB and Co, and magnetic anisotropy. These results may advance the understanding of SOT switching of perpendicular SAFs and promote the applications of SAFs with low stray fields and lower power in spintronic devices.

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Modulation of Spin-Orbit Torque and Large Enhancement of Perpendicular Magnetic Anisotropy in W/Co20Fe60B20
Luo
¹
,
Wang
²
,
Wei
³

et al. 2023
Phys. Rev. Applied
6
0
0
0
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Thermally Robust Perpendicular SOT-MTJ Memory Cells With STT-Assisted Field-Free Switching

Cited by 8 publications

References 15 publications

Tunneling magnetoresistance materials and devices for neuromorphic computing

Tunneling magnetoresistance materials and devices for neuromorphic computing

Unusual spin–orbit torque switching in perpendicular synthetic antiferromagnets with strong interlayer exchange coupling

Modulation of Spin-Orbit Torque and Large Enhancement of Perpendicular Magnetic Anisotropy in W/Co20Fe60B20
Luo
¹
,
Wang
²
,
Wei
³

et al. 2023
Phys. Rev. Applied
6
0
0
0
View full text Add to dashboard Cite

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Thermally Robust Perpendicular SOT-MTJ Memory Cells With STT-Assisted Field-Free Switching

Cited by 8 publications

References 15 publications

Tunneling magnetoresistance materials and devices for neuromorphic computing

Tunneling magnetoresistance materials and devices for neuromorphic computing

Unusual spin–orbit torque switching in perpendicular synthetic antiferromagnets with strong interlayer exchange coupling

Modulation of Spin-Orbit Torque and Large Enhancement of Perpendicular Magnetic Anisotropy in W/Co20Fe60B20Luo1, Wang2, Wei3 et al. 2023Phys. Rev. Applied6000View full textAdd to dashboardCite

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About

Modulation of Spin-Orbit Torque and Large Enhancement of Perpendicular Magnetic Anisotropy in W/Co20Fe60B20
Luo
¹
,
Wang
²
,
Wei
³

et al. 2023
Phys. Rev. Applied
6
0
0
0
View full text Add to dashboard Cite