Thermally stimulated current studies on deep levels in hydrothermally grown single crystal ZnO bulk

Kuriyama, K.; Ooi, Mahayatun Dayana Johan; Matsumoto, Kenji; Kushida, K.

doi:10.1063/1.2405867

Cited by 23 publications

(15 citation statements)

References 18 publications

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“…D2 has E a close to that of a hole trap located at E V = 0.15-0.16 eV identified in particle irradiated ZnO materials. 8,15,24,25 However, further effort is needed to clarify the defect identity.…”

mentioning

confidence: 99%

Deep level defects in a nitrogen-implanted ZnO homogeneous p-n junction

Gu¹,

Ling²,

Bräuer

et al. 2008

Appl. Phys. Lett.

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mentioning

confidence: 99%

Deep level defects in a nitrogen-implanted ZnO homogeneous p-n junction

Gu¹,

Ling²,

Bräuer

et al. 2008

Appl. Phys. Lett.

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“…Examinations by deep-level transient spectroscopy of ZnO crystals have, in fact, verified the formation of V O defects. [13][14][15] Recent first principles calculations done by several authors, however, have revealed that the formation energy of V O is rather high ͑ϳ3.5 eV͒ and that V O is a deep donor; hence, it cannot be the origin of n-type conduction. [16][17][18][19][20] In contrast, the formation energy of Zn i is low and Zn i acts as a shallow donor.…”

Section: A Native Donors Participating In Electric Conduction Of Znomentioning

confidence: 96%

Modification of transparent conductive ZnO and Ga-doped ZnO films by irradiation with electron cyclotron resonance argon plasma

Akazawa

2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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By irradiating undoped ZnO and Ga-doped ZnO (GZO) films with electron cyclotron resonance Ar plasma, their electrical and optical properties have been modified. Both the carrier concentration and the Hall mobility increased with continuous irradiation in conductive ZnO films with a defect-rich crystalline lattice. Improved crystallinity was verified by intensifying the ZnO(002) x-ray diffraction peak and increasing the optical transmission level in the visible wavelength. This observation suggests network rearrangement through Zn atoms at interstitials or grain boundaries being oxidized or accommodated into the crystalline network. For insulating ZnO films that contain a sufficient number of oxygen atoms, the changes were better scaled with sheet resistance rather than resistivity. The interference fringes redshifted without lowering the transmittance level. Here, Ar ion impact will create oxygen vacancy donors in the near-surface region or desorb interstitial oxygen atoms that act as donor killers. In contrast, GZO films with resistivities in the 10−4 Ω cm range revealed little changes because there were very few imperfections in the crystalline lattice. The reduced amount of resistivity corresponded to the creation of oxygen vacancies in more resistive GZO films in the 10−3 Ω cm range.

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“…However defects, radiation effects are key issues for practical applications. Accordingly, TSC measurement is employed to evaluate energy levels of trap, trap density, and defects induced by photo-and particle-radiation in the bulk of these semiconductors [28][29][30]. The technique used for TSC measurement is basically the same with other cases of TSC measurement, but the TSC system is PZT is ferroelectric materials and it is used as materials for memory devices.…”

Section: Inorganic Devicesmentioning

confidence: 99%

Research trend in thermally stimulated current method for development of materials and devices in Japan

Iwamoto

Taguchi

2018

Jpn. J. Appl. Phys.

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Thermally stimulated current (TSC) measurement is widely used in a variety of research fields, i.e., physics, electronics, electrical engineering, chemistry, ceramics, biology, etc. TSC is short circuit current and it flows due to displacement of charges in samples during heating. The TSC measurement is very simple, but TSC curves give much important information on charge behaviors. In 1970's, TSC measurement made a great contribution to the development of electrical insulation engineering, to the development of semiconductor device technology, and so forth. Accordingly, TSC experimental technique and its analytical method had advanced. On the other hand, during the past several ten years, many new molecules and advanced functional materials have been discovered and developed. Along with this situation, TSC measurement has attracted much attention in industries and in academic laboratories as a way for characterizing discovered new materials and devices. This review reports the latest research trend in TSC method for development of Materials and Devices in Japan.

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Thermally stimulated current studies on deep levels in hydrothermally grown single crystal ZnO bulk

Cited by 23 publications

References 18 publications

Deep level defects in a nitrogen-implanted ZnO homogeneous p-n junction

Deep level defects in a nitrogen-implanted ZnO homogeneous p-n junction

Modification of transparent conductive ZnO and Ga-doped ZnO films by irradiation with electron cyclotron resonance argon plasma

Research trend in thermally stimulated current method for development of materials and devices in Japan

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