The studies of the behavior of zinc oxide and its dielectric constant at different temperature ranging from 700

The evaluation of the deep levels in hydrothermally grown ZnO single crystal bulk is studied using a thermally stimulated current (TSC) method with excitation above (below) the band gap. Two broad TSC spectra are resolved by four traps, P1 (165meV), P2 (255meV), P3 (300meV), and P4 (375meV). P2, P3, and P4 traps are responsible for excitation by the blue and green lights, but P1 trap is weakly responsible. Possible origins of P1 and P2 are attributed to native point defects and Li acceptor, respectively. P3 is correlated to oxygen vacancy as an origin of the green luminescence.

The evaluation of the neutron irradiation induced defects in GaN is studied using a thermally stimulated current (TSC) method with excitation above (below) the energy band gap using ultraviolet (blue, green, red, and infrared) emitting diodes. Annealing at 1000°C, a broad TSC spectrum for excitation by the ultraviolet light is resolved by five traps, P1 (ionization energy is 200meV), P2 (270meV), P3 (380meV), P4 (490meV), and P5 (595meV). Infrared illumination shows a remarkable reduction in TSC for the P2 and P3 traps, indicating the photoquenching behavior. The possible origins of the observed five traps are discussed.

No abstract

No abstract