Thermodynamic Analysis and Kinetics of Etching of Thin PbS Films in Hydrochloric Acid Solutions

Thermodynamic Analysis and Defection Formation in Alloys on the Basis of Lead Selenide Containing Copper

“…Their use in electronics imposes special requirements on properties and quality of structure of the obtained materials. The above stated is confirmed by advances in the synthesis of materials with controlled properties based on PbS [6], PbSe [7] and Cu 2 Se [8].…”

“…The calculation of in the liquidus line of the PbSe compound in the Pb -Se binary system is determined by the expression: (3) To change the temperature of PbSe crystallization surface on the composition of the components in the Cu -Pb -Se ternary system with due regard for (3), we obtain (4) Where the sum of the partial excess molar free energies of lead and selenium is calculated by equation (3) based on the coordinates of the PbSe liquidus curve. As for the asymmetric dependence (4), the value of the degree 0.35 takes into account changes in the crystallization temperature of PbSe as a function of the copper concentration in the Cu -Pb -Se melts which is determined on the basis of DTA samples from the Cu -PbSe section.Using dependences of the partial pressure of saturated selenium vapor[2,3] and copper concentration on the temperature on the liquidus surface of Cu -Pb -Se for the PbSe -Se (I) and PbSe -Pb (II) regions, we obtain(5) and (6crystallization surface in Cu -Pb -Se at high pressure, taking into account equations(5) and(6), is shown inFig. 2.…”