To cite this article: Soumitra Roy, Soma Prasad, Sergiy V. Divinski & Aloke Paul (2014) Diffusion pattern in MSi 2 and M 5 Si 3 silicides in group VB (M = V, Nb, Ta) and VIB (M = Mo, W) refractory metalsilicon systems, Philosophical Magazine, 94:14, 1508-1528, Group VB and VIB M-Si systems are considered to show an interesting pattern in the diffusion of components with the change in atomic number in a particular group (M = V, Nb, Ta or M = Mo, W, respectively).Mainly two phases, MSi 2 and M 5 Si 3 are considered for this discussion. Except for Ta-silicides, the activation energy for the integrated diffusion of MSi 2 is always lower than M 5 Si 3 . In both phases, the relative mobilities measured by the ratio of the tracer diffusion coefficients,, decrease with an increasing atomic number in the given group. If determined at the same homologous temperature, the interdiffusion coefficients increase with the atomic number of the refractory metal in the MSi 2 phases and decrease in the M 5 Si 3 ones. This behaviour features the basic changes in the defect concentrations on different sublattices with a change in the atomic number of the refractory components.