Thermodynamic Behavior of Excitonic Emission Properties in Manganese- and Zinc-Codoped Indium Phosphide Diluted Magnetic Semiconductor Layers

Abstract

The thermodynamic behavior of excitonic emission properties in manganese-and zinc-codoped indium phosphide (InMnP:Zn) diluted magnetic semiconductor (DMS) layers was investigated. Compared to the InMnP:Zn DMS layer (Mn ≈ 0.06%), the inhomogeneous thermal-broadening of the excitonic-emission line-width in InMnP:Zn DMS layer (Mn ≈ 0.29%) is dominant at lower temperatures. This is attributed to the increase of ionized impurity scattering from Mn ions and results in the increase of excitonÀphonon coupling strength. As a consequence, high Mn content can lead to low excitonic emission efficiency, although generally a larger Mn content is favorable to increase the Curie temperature of a DMS material.

Effects of Thermal Annealing on Optical and Microscopic Ferromagnetic Properties in InZnP:Ag Nano-Rods

“…The emission peak around 1.337 eV belongs to the electron and to the neutral acceptor (e, Ag) transition. Similar peaks corresponding to Mn [ 27 , 29 ] acceptors in InP were previously reported in similar positions. After the samples were annealed at 250, 300, and 350 °C, the PL peak displayed suppression of Ag-related peaks around 0.96 eV compared with (A 0 X) and (e, Ag).…”

Room-Temperature Ferromagnetic Ultrathin α-MoO3:Te Nanoflakes

“…As the temperature decreases to 20 K, only P 0 shows a blue shift, while other peaks exhibit almost no temperature dependence of their peak positions. In semiconducting materials, the excitonic emission energy depends on the temperature because of both the exciton–phonon interaction and the thermal expansion of the emission lines. , However, the emission energies of the d–d intraband transitions from metallic dopant ions are independent of the temperature . Therefore, the strong blue emission at P 0 (∼2.88 eV) can be assigned as resulting from near-band-edge (NBE) emission, , and four other emission peaks can be allocated by the lattice imperfection. , As mentioned above, the incorporation of Te into α-MoO 3 leads to the partial distortion of the octahedron centers, and it results in the formation of pentacoordinated Mo 5+ ions.…”

“…In semiconducting materials, the excitonic emission energy depends on the temperature because of both the exciton−phonon interaction and the thermal expansion of the emission lines. 36,37 However, the emission energies of the d−d intraband transitions from metallic dopant ions are independent of the temperature. 38 Therefore, the strong blue emission at P 0 (∼2.88 eV) can be assigned as resulting from near-band-edge (NBE) emission, 39,40 and four other emission peaks can be allocated by the lattice imperfection.…”

Correlation between Optical Localization-State and Electrical Deep-Level State in In0.52Al0.48As/In0.53Ga0.47As Quantum Well Structure

“…To examine the optical properties of the sample, the temperature-dependent PL measurements were carried out at 10-300 K by using a home-built PL system [35,36], where the picosecond diode laser (λ laser = 634 nm) and the time-correlated single-photon counter were equipped as an excitation source and a light emission detector, respectively. The excitation power density was fixed at 50 W/cm 2 for all measurements.…”