Precisely ordered
arrays of InAs quantum dots are formed on a nanoisland-structured
GaAs (100) surface using in situ laser interference during self-assembled
molecular beam epitaxial growth. Nanoislands induced by single-pulse
four-beam laser interference act as preferential nucleation sites
for InAs quantum dots and result in site occupation dependent on the
size of nanoislands, the InAs coverage, and the laser parameters.
By optimizing the growth and interference conditions, regular dense
ordering of single dots was obtained for the first time using this
in situ noninvasive approach. The photoluminescence spectra of the
resulting quantum dot arrays with a period of 300 nm show good optical
quality and uniformity. This technique paves the way for the rapid
large-scale fabrication of arrays of single dots to enable quantum
information technology device platforms.