Laser interference has been widely used to produce one-dimensional gratings and more recently has shown great potential for two-dimensional patterning. In this paper, we examine by simulation, its application to in-situ patterning during materials growth. To understand the potential, it is important to study the surface processes resulting from the laser-matter interaction, which have a key influence on the resulting growth mechanisms. In this work, the intensity distribution and the laser-semiconductor interaction resulting from four-beam interference patterns are analysed by numerical simulations. In particular, we derive the time and spatially dependent thermal distribution along with the thermal-induced desorption and surface diffusion. The results provide a crucial understanding of the light-induced thermal profile and show that the surface temperature and the surface adatom kinetics can be controlled by multi-beam pulsed laser interference patterning due to photothermal reactions. The approach has potential as an in-situ technique for the fast and precise nanostructuring of semiconductor material surfaces.

In this work, the authors demonstrate the control of quality factor (Q-factor) is laterally coupled vertical cavities. A 3 μm-side-length square cavity directly connected to a 1.5 μm-width, 10 μm-length Fabry-Perot (FP) cavity has been fabricated and measured. Dynamic tuning of the Q-factor has been successfully observed by bringing the square cavity and FP cavity into resonance. The vertical-cavity-based Q-factor control scheme provides a new choice for the modulation of light and holds potentials for applications associated with optical information processing.

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