2008
DOI: 10.1016/j.jnoncrysol.2007.08.084
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Thermodynamics of fluorine incorporation into silica glass

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Cited by 16 publications
(7 citation statements)
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“…dopant concentration in the MCVD process can be well decribed as a rule by the chemical thermodynamics of the species taking part in the deposition reactions, this means by chemical equilibria between the gaseous and condensed (liquid or solid) phase, where the condensed glassy phase is considered as an ideal mixture of the components. This was earlier shown for germanium, phosphorus and boron incorporation [6,11,7] and recently also for the fluorine incorporation [4], where the thermodynamic potentials of the species were derived from a series of experiments with different fluorine sources. During the MCVD deposition at temperatures near 2000 K and with oxygen excess in the gas phase, the starting raw gases SiCl 4 and BBr 3 are fully converted to the oxides…”
Section: Thermodynamic Calculations and Discussionmentioning
confidence: 55%
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“…dopant concentration in the MCVD process can be well decribed as a rule by the chemical thermodynamics of the species taking part in the deposition reactions, this means by chemical equilibria between the gaseous and condensed (liquid or solid) phase, where the condensed glassy phase is considered as an ideal mixture of the components. This was earlier shown for germanium, phosphorus and boron incorporation [6,11,7] and recently also for the fluorine incorporation [4], where the thermodynamic potentials of the species were derived from a series of experiments with different fluorine sources. During the MCVD deposition at temperatures near 2000 K and with oxygen excess in the gas phase, the starting raw gases SiCl 4 and BBr 3 are fully converted to the oxides…”
Section: Thermodynamic Calculations and Discussionmentioning
confidence: 55%
“…The initial gas phase conditions are specified by the total gas flow V (in sccm = standard cubic centimeters per minute) and the molar fractions of the respective compounds X SiCl4 , X SiF4 , X GeCl4 , X BBr3 and X O2. Further details of the process are described in [4]. The refractive index of the deposited layers in the perform core was determined by a nondestructive beam deviation method [9].…”
Section: Methodsmentioning
confidence: 99%
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“…But for the case of OVD and VAD processes, the layer deposited on the outside of a rotating mandrel by using the flame hydrolysis. These methods are different in terms of deposition rate, efficiency and precision of refractive index profiles [35]. Particularly, MCVD process is a most common method for passive and active modification of OFs [36].…”
Section: Vapor Depositionmentioning
confidence: 99%