In this study, we
present a comprehensive analysis of the thermoelectric
(TE) properties of highly c-axis-oriented thin films
of layered misfit cobaltates Bi2Sr2Co2O
y
. The films exhibit a high c-axis orientation, facilitating precise measurements of
electronic transport and TE properties along the a–b crystallographic plane. Our findings reveal
that the presence of nearly stoichiometric oxygen content results
in high thermopower with metallic conductivity, while the annealing
of the films in a reduced oxygen atmosphere eliminates their metallic
behavior. According to the well-established Heike’s limit,
the thermopower tends to become temperature independent when the thermal
energy significantly exceeds the bandwidth, which provides a rough
estimation of charge carrier density by using the Heike’s formula.
This observation suggests that the dominant contribution to the thermopower
comes from the narrow Co–t2g bands near the Fermi
energy. Our study demonstrates that the calculated thermopower value
using Heike’s formula, based on the Hall electron density of
the Bi2Sr2Co2O
y
thin films at 300 K, aligns well with the experimental results,
shedding light on the intriguing TE properties of this family of layered
cobaltate oxide films.