Thermoelectric Cooling Read for Resolving Read Disturb With Inrush Current Issue in OTS-PRAM

Park, Hyunkook; Choi, Tae Hoon; Ahn, Hong Keun; Jung, Seong‐Ook

doi:10.1109/tnano.2019.2910846

Cited by 9 publications

(2 citation statements)

References 30 publications

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“…2(a), when Vbias exceeds Vthset while the cell is in the set state, the resistance of the OTS abruptly decreases. This causes a drastically increased current flow through the cell, which is referred to as an OTS snapback current [21], [26]- [29].…”

Section: B Read Disturb With Ots Snapback Currentmentioning

confidence: 99%

“…The C-type PCM was developed to the X-Point PCM in recent years [19]- [20]. However, the X-Point PCM suffers from snap currents in its OTS devices, which are used for implementing access devices [21]. During the read operation, the current flow through the OTS current abruptly increases due to the snapback phenomenon, which adversely affects the reading performance of the OTS-PRAM and inflicts damages on the memory element (PM).…”

Section: Introductionmentioning

confidence: 99%

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A Discharge-Path-Based Sensing Circuit With OTS Snapback Current Protection for Phase Change Memories

Choi

Sung

et al. 2022

IEEE Access

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A discharge-path-based sensing circuit is proposed to reduce the damage caused by an ovonic threshold switch (OTS) snapback current to a phase-change memory (PCM). OTS devices are used as access devices (selectors) in most PCM systems to increase the sensitivity and resolve the leakage current problem that occurs during sensing of the PCM cell. Snapback current, which occurs during an OTS phase change by using the OTS device, causes damage to the PCM device and deteriorates the read performance; thus, this study proposes a discharge path circuit as a new sensing method to reduce the damage inflicted on the PCM. In addition, a gate-coupled PMOS (GCPMOS) and a current mirror using a feed-forward technique are designed to reduce the peak value of the energy applied to the PCM. The discharge path circuit, GCPMOS, and the current mirror are designed in a 180-nm CMOS process and occupy an area of 0.19-mm 2 . The measurement results after fabrication show that, compared to the conventional sense amplifier based scheme, the discharge path circuit reduces the amount of energy applied to the PCM by 21.8%, and the discharge path circuit with the GCPMOS reduces the total energy consumption by 27.7%. Furthermore, the discharge path circuit with a feed-forward current mirror reduces the initial peak level of the PCM current by 10.1% and the total energy consumption by 34.6%. The proposed sensing circuit is the first snapback protection circuit reported to the public domain.

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Section: B Read Disturb With Ots Snapback Currentmentioning

confidence: 99%