To investigate whether environmentally
benign chalcopyrite phosphides
may be used in the thermoelectric energy conversion, the solid solution
ZnGe1–x
Sn
x
P2 was prepared by ball-milling, followed by hot-pressing
with x = 0, 0.25, 0.5, 0.75, and 1. Despite the comparably
light constituent elements and the simple crystal structure, the room
temperature thermal conductivity went below 3 W m–1 K–1 in the middle of the series (x = 0.5), where the phonon scattering caused by the alloying effect
was maximized. Band structure engineering can be employed to enhance
the band degeneracies either at the top of the valence band or at
the bottom of the conduction band by varying x (the
Sn content). Boltztrap calculations revealed that high power factor
values can be achieved on either side of the Fermi level. Combining
these results assuming a constant relaxation time with the experimental
thermal conductivity data confirmed that zT values
in excess of unity could theoretically be obtained at 900 K for all
members at different doping levels; for p-doping, the highest zT of 1.7 was predicted to for ZnGe0.5Sn0.5P2, and for n-doping, a peak zT of 1.4 was predicted for ZnGeP2. It remains to be seen
whether these doping levels can be experimentally obtained.