High
performance, low cost, and low toxicity have been the main
characteristics associated with magnesium-based thermoelectric materials.
Nevertheless, the high volatility of magnesium creates challenges
in the synthesis of these materials. In this work, n-type Mg
2
Ge is synthesized using a solid-state technique, fully characterized,
and compared with Mg
2
Ge fabricated through different processes.
We have found that Bi is an ineffective dopant in Mg
2
Ge
and precipitates into Mg
2
Bi
3
. Regardless of
the technique used, the loss of Mg by evaporation and formation of
precipitates in Bi-doped samples resulted in a low charge carrier
concentration and, consequently, a low power factor. The precipitates
significantly reduced the lattice thermal conductivity, however, leading
to a figure-of-merit,
zT
, of 0.4 at 725 K, improving
the previously reported figure-of-merit,
zT
, of 0.2
for Sb-doped Mg
2
Ge. This work highlights the impact of
the fabrication technique on the thermoelectric performance of Mg-based
compounds.