Thermoelectric properties and low thermal conductivity of nanocomposite ZrTe5 under magnetic field

Ramière, Aymeric; Fu, Li; Chen, Yuexing; Fu, Yongqing

doi:10.1016/j.jallcom.2020.155651

Cited by 7 publications

(3 citation statements)

References 49 publications

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“…Several techniques, such as electron-hole doping [ 3 , 4 ], strain engineering, forming a layered structures, effect of resonant levels [ 5 ], etc., have been used to enhance the value of ZT. The various efficient bulk thermoelectrics include Heusler materials [ 6 , 7 , 8 , 9 ], phonon glass and electron crystals (PGEC) [ 10 , 11 ], pentatellurides [ 12 ], clathrates [ 13 ], chalcogenides [ 14 ], skutterudite [ 15 ], oxides [ 16 ], and tin selenide [ 17 ], etc., which have low thermal conductivity and high electrical properties.…”

Section: Introductionmentioning

confidence: 99%

Electronic Structure-, Phonon Spectrum-, and Effective Mass- Related Thermoelectric Properties of PdXSn (X = Zr, Hf) Half Heuslers

et al. 2022

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We hereby discuss the thermoelectric properties of PdXSn(X = Zr, Hf) half Heuslers in relation to lattice thermal conductivity probed under effective mass (hole/electrons) calculations and deformation potential theory. In addition, we report the structural, electronic, mechanical, and lattice dynamics of these materials as well. Both alloys are indirect band gap semiconductors with a gap of 0.91 eV and 0.82 eV for PdZrSn and PdHfSn, respectively. Both half Heusler materials are mechanically and dynamically stable. The effective mass of electrons/holes is (0.13/1.23) for Zr-type and (0.12/1.12) for Hf-kind alloys, which is inversely proportional to the relaxation time and directly decides the electrical/thermal conductivity of these materials. At 300K, the magnitude of lattice thermal conductivity observed for PdZrSn is 15.16 W/mK and 9.53 W/mK for PdHfSn. The highest observed ZT value for PdZrSn and PdHfSn is 0.32 and 0.4, respectively.

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Section: Introductionmentioning

confidence: 99%

Electronic Structure-, Phonon Spectrum-, and Effective Mass- Related Thermoelectric Properties of PdXSn (X = Zr, Hf) Half Heuslers

et al. 2022

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“…The energy conversion efficiency of TE materials is determined by the TE dimensionless figure of merit ZT , ZT = S 2 T /ρ(κ e + κ L ), where S is the Seebeck coefficient, ρ is the electrical resistivity, T is the absolute temperature, κ e is the electronic thermal conductivity, and κ L is the lattice thermal conductivity of the materials. − The high conversion efficiency requires a high power factor (PF = S 2 /ρ) and low thermal conductivity in TE materials. The thermal conductivity of ZrTe 5 is very low, for example, the κ L of its single crystal along the b axis is as low as 0.35 W m –1 K –1 , which makes this material a potential candidate with significant TE performances. − The reasons for its low κ L include its heavy element content, complex crystal structure, van der Waals (vdW) layered structure, and weak chemical bonds …”

Section: Introductionmentioning

confidence: 99%

Strong Anisotropy and Bipolar Conduction-Dominated Thermoelectric Transport Properties in the Polycrystalline Topological Phase of ZrTe₅

et al. 2021

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ZrTe 5 has unique features of a temperaturedependent topological electronic structure and anisotropic crystal structure and has obtained intensive attention from the thermoelectric community. This work revealed that the sintered polycrystalline bulk ZrTe 5 possesses both (020) and ( 041) preferred orientations. The transport properties of polycrystalline bulk p-type ZrTe 5 exhibits an obvious anisotropic characteristic, that is, the room-temperature resistivity and thermal conductivity, possessing anisotropy ratios of 0.71 and 1.49 perpendicular and parallel to the pressing direction, respectively. The polycrystalline ZrTe 5 obtained higher ZT values in the direction perpendicular to the pressing direction, as compared to that in the other direction. The highest ZT value of 0.11 is achieved at 350 K. Depending on the temperature-dependent topological electronic structure, the electronic transport of p-type ZrTe 5 is dominated by high-mobility electrons from linear bands and low-mobility holes from the valence band, which, however, are merely influenced by valence band holes at around room temperature. Furthermore, external magnetic fields are detrimental to thermoelectric properties of our ZrTe 5 , mainly arising from the more prominent negative effects of electrons under fields. This research is instructive to understand the transport features of ZrTe 5 and paves the way for further optimizing their ZTs.

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“…[38][39][40] Generally, these two unique properties are benecial for thermoelectrical (TE) materials. 41,42 Thus, the TE properties of several 2D MA 2 Z 4 materials have attracted the attention of researchers. Theoretically, Huang et al suggested that p-type doped MoSi 2 As 4 has a relatively high ZT value of 0.90 at 1100 K and shows great potential as a candidate for thermoelectric materials at high temperature.…”

Section: Introductionmentioning

confidence: 99%

A theoretical prediction of thermoelectrical properties for novel two-dimensional monolayer ZrSn₂N₄

Feng,

Qi,

et al. 2024

J. Mater. Chem. A

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Thermoelectric properties and low thermal conductivity of nanocomposite ZrTe5 under magnetic field

Cited by 7 publications

References 49 publications

Electronic Structure-, Phonon Spectrum-, and Effective Mass- Related Thermoelectric Properties of PdXSn (X = Zr, Hf) Half Heuslers

Electronic Structure-, Phonon Spectrum-, and Effective Mass- Related Thermoelectric Properties of PdXSn (X = Zr, Hf) Half Heuslers

Strong Anisotropy and Bipolar Conduction-Dominated Thermoelectric Transport Properties in the Polycrystalline Topological Phase of ZrTe₅

A theoretical prediction of thermoelectrical properties for novel two-dimensional monolayer ZrSn₂N₄

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Thermoelectric properties and low thermal conductivity of nanocomposite ZrTe5 under magnetic field

Cited by 7 publications

References 49 publications

Electronic Structure-, Phonon Spectrum-, and Effective Mass- Related Thermoelectric Properties of PdXSn (X = Zr, Hf) Half Heuslers

Electronic Structure-, Phonon Spectrum-, and Effective Mass- Related Thermoelectric Properties of PdXSn (X = Zr, Hf) Half Heuslers

Strong Anisotropy and Bipolar Conduction-Dominated Thermoelectric Transport Properties in the Polycrystalline Topological Phase of ZrTe5

A theoretical prediction of thermoelectrical properties for novel two-dimensional monolayer ZrSn2N4

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Strong Anisotropy and Bipolar Conduction-Dominated Thermoelectric Transport Properties in the Polycrystalline Topological Phase of ZrTe₅

A theoretical prediction of thermoelectrical properties for novel two-dimensional monolayer ZrSn₂N₄