Tl9BiTe6, a substitution variant of Tl5Te3, is one of the leading midtemperature thermoelectrics
and is postulated to exceed ZT = 1 above 450 K when
prepared by zone-melting and reach ZT = 0.86 at 560
K after hot-pressing. We have prepared the isostructural series Tl9Sb1–x
Te6, Tl9–x
Sb1+x
Te6, Tl9Bi1–x
Te6, and Tl9–x
Bi1+x
Te6, with x ranging from 0 to 0.05, from the elements in the stoichiometric
ratios and determined their thermoelectric properties after hot-pressing.
In theory, these tellurides are narrow-gap semiconductors when x = 0, with all elements in common oxidation states, according
to (Tl+)9(Sb/Bi)3+(Te2–)6. The as-prepared samples of this 9-1-6 stoichiometry,
however, exhibit relatively high electrical conductivity, which decreases
with increasing temperature, indicative of the presence of extrinsic
charge carriers. The Seebeck coefficient is generally above +100 μV
K–1. Decreasing the Sb and Bi content increases
the hole carrier concentration and thus increases the electrical conductivity
while decreasing the Seebeck coefficient. The best feature of these
thermoelectrics is their low thermal conductivity, which is consistently
well below 0.7 W m–1 K–1. In combination
with reasonable electrical conductivity and a high Seebeck coefficient,
high ZT values in excess of 1 can also be achieved
via simple hot-pressing after experimental optimization of the carrier
concentration via introducing deficiencies on the Bi site. Moreover,
the variants with Sb instead of Bi exhibit similar thermoelectric
performance, a result of the combination of a better electrical performance
and higher thermal conductivity.