2013
DOI: 10.1155/2013/131537
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Thermoelectric Properties of Al‐Doped Mesoporous ZnO Thin Films

Abstract: Al-doped mesoporous ZnO thin films were synthesized by a sol-gel process and an evaporation-induced self-assembly process. In this work, the effects of Al doping concentration on the electrical conductivity and characterization of mesoporous ZnO thin films were investigated. By changing the Al doping concentration, ZnO grain growth is inhibited, and the mesoporous structure of ZnO is maintained during a relatively high temperature annealing process. The porosity of Al-doped mesoporous ZnO thin films increased … Show more

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Cited by 14 publications
(6 citation statements)
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“…That means with a temperature difference of 68 K, a V oc of 3.4 mV and a I sc of 0.24 mA is achieved, and an electrical power of 0.2 µW is generated with a flexible and textile TEG. Applying equation ( 1), these measurements result in an average Seebeck coefficient for AZO of 30 or 50 µV K −1 , dependent on the deposition temperatures of 225 • C and 180 • C. These values are in line with the literature dependent on terms of manufacture [32][33][34]. Figure 2(B) shows the calculated values for |α| in relation to the applied temperature difference dT.…”
Section: Te Generator-determination Of Seebeck Coefficientsupporting
confidence: 82%
“…That means with a temperature difference of 68 K, a V oc of 3.4 mV and a I sc of 0.24 mA is achieved, and an electrical power of 0.2 µW is generated with a flexible and textile TEG. Applying equation ( 1), these measurements result in an average Seebeck coefficient for AZO of 30 or 50 µV K −1 , dependent on the deposition temperatures of 225 • C and 180 • C. These values are in line with the literature dependent on terms of manufacture [32][33][34]. Figure 2(B) shows the calculated values for |α| in relation to the applied temperature difference dT.…”
Section: Te Generator-determination Of Seebeck Coefficientsupporting
confidence: 82%
“…The nanoflowers consist of nanorods and it is well known that the electron transport rate in one‐dimensional semiconductor nanostructures (1D nanorods or nanowires) is faster than that of the semiconductor nanoparticles …”
Section: Resultsmentioning
confidence: 99%
“…The fact that the Seebeck coefficient values are always negative over the whole temperature range and for all of the samples which demonstrates that the semiconductor in question is of the n-type kind, which has electrons as the predominant form of charge carrier. [15,25,26]. Figure 5 makes it abundantly evident that there is a correlation between a rise in temperature and an increase in the absolute values of [18].The has a correlation that is inversely proportional to the number of carriers.…”
Section: Resultsmentioning
confidence: 99%