Thermoelectric properties of Bi2SexTe3−x prepared by Bridgman method

Keawprak, Nittaya; Lao-ubol, Supranee; Eamchotchawalit, Chutima; Sun, ZhengMing

doi:10.1016/j.jallcom.2011.06.116

Cited by 24 publications

(7 citation statements)

References 9 publications

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“…The experimental realization of TI states was carried out by several methods including thin film and nanoplate preparation [9,10,12,[14][15][16]. Besides this, it is well known that Bi 2 Se 3 family crystals possess good cleavage properties and high-quality (0001) surface of macroscopic area can be prepared using the bulk crystal and cleavage procedure [5,7,[17][18][19][20][21][22][23][24]. This method of the pristine surface preparation was used in many experiments on TI effect observation and top surface engineering of Bi 2 Se 3 -family crystals.…”

Section: Introductionmentioning

confidence: 99%

Crystal growth of Bi2Te3 and noble cleaved (0001) surface properties

Atuchin

Golyashov

Кох

et al. 2016

Journal of Solid State Chemistry

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Section: Introductionmentioning

confidence: 99%

Crystal growth of Bi2Te3 and noble cleaved (0001) surface properties

Atuchin

Golyashov

Кох

et al. 2016

Journal of Solid State Chemistry

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“…Srinivasan et al [122] in 2010, Yan et al [123] in 2010, Kim et al [124] in 2011, Carlton et al [125] in 2012 and Hu et al [126] in 2014 all reported enhancing the thermoelectric properties due to Se substitution in n-type Bi2Te2.7Se0.3. Keawparak et al [127], in 2011, prepared the same alloy (Bi2Te3-xSex) by the Bridgman method and obtained a p-type conduction type for all the Se concentrations. The Seebeck coefficient was almost independent of the Se amount, while the electrical conductivity decreased with Se impurity content.…”

Section: A Recent Development On the Isovalent Substitution Effect In...mentioning

confidence: 99%

Isovalent substitution in metal chalcogenide materials for improving thermoelectric power generation – A critical review

Musah

Ilyas

Venkatesh

et al. 2022

Nano Research Energy

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The adverse effect of fossil fuels on the environment is driving research to explore alternative energy sources. Research studies have demonstrated that renewables can offer a promising strategy to curb the problem, among which thermoelectric technology stands tall. However, the challenge with thermoelectric materials comes from the conflicting property of the Seebeck coefficient and the electrical conductivity resulting in a low power factor and hence a lower figure of merit. Researchers have reported various techniques to enhance the figure of merit, particularly in metal chalcogenide thermoelectric materials.Here we present a review on isovalent substitution as a tool to decouple the interdependency of the electrical conductivity and Seebeck coefficient to facilitate simultaneous enhancement in these two parameters. This is proven true in both cationic and anionic side substitutions in metal chalcogenide thermoelectric materials. Numerous publications relating to isovalent substitution in metal chalcogenide thermoelectric are reviewed. This will serve as a direction for current and future research to enhance thermoelectric performance and device application. This review substantiates the role of isovalent substitution in enhancing metal chalcogenide thermoelectric properties compared with conventional systems.

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“…On the other hand, because of the formation of Te-rich phase, the Te content in the matrix should be reduced relative to the nominal composition. In order to compensate the loss of Te, excessive amount of Te was incorporated in this study, considering high dependence of thermoelectric performance on stoichiometric ratios of Bi, Te and Se [14,15]. The objective of this study was focused on the formation and distribution of Te-rich phase as well as its effect on microstructure and thermoelectric properties of the hot-extruded Bi-Te-Se bulk materials.…”

Section: Introductionmentioning

confidence: 99%

Formation of Te-rich phase and its effect on microstructure and thermoelectric properties of hot-extruded Bi–Te–Se bulk materials

Wang

Akao

Onda

et al. 2016

Journal of Alloys and Compounds

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A mechanical alloying (MA) and hot-extrusion technique was used to prepare n-type BiTe -Se bulk materials. The formation and distribution of Te-rich phase as well as its effect on microstructure and thermoelectric properties of the extruded samples have been investigated. The formation of Te-rich phase is mainly associated with sublimation of Te and eutectic reaction. The former occurs at any extrusion temperature and leads to formation of small-sized Te-rich phase, while the latter occurs at ≥400 o C and the resultant Te-rich phase possesses large sizes. The Te-rich phase was distributed in different morphologies depending on the extrusion temperature. Small-sized Te-rich phase was distributed around the grain boundaries in extruded samples. When excessive amount of Te was incorporated, the average grain size and orientation degree were found to be reduced due to formation of more Te-rich

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Thermoelectric properties of Bi2SexTe3−x prepared by Bridgman method

Cited by 24 publications

References 9 publications

Crystal growth of Bi2Te3 and noble cleaved (0001) surface properties

Crystal growth of Bi2Te3 and noble cleaved (0001) surface properties

Isovalent substitution in metal chalcogenide materials for improving thermoelectric power generation – A critical review

Formation of Te-rich phase and its effect on microstructure and thermoelectric properties of hot-extruded Bi–Te–Se bulk materials

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