Thermoelectric Properties of n-Type Molybdenum Disulfide (MoS2) Thin Film by Using a Simple Measurement Method

Abstract

In this paper, a micrometre thin film of molybdenum disulfide (MoS2) is characterized for thermoelectric properties. The sample was prepared through mechanical exfoliation of a molybdenite crystal. The Seebeck coefficient measurement was performed by generating a temperature gradient across the sample and recording the induced electrical voltage, and for this purpose a simple measurement setup was developed. In the measurement, platinum was utilized as reference material in the electrodes. The Seebeck value of MoS2 was estimated to be approximately −600 µV/K at a temperature difference of 40 °C. The negative sign indicates that the polarity of the material is n-type. For measurement of the thermal conductivity, the sample was sandwiched between the heat source and the heat sink, and a steady-state power of 1.42 W was provided while monitoring the temperature difference across the sample. Based on Fourier’s law of conduction, the thermal conductivity of the sample was estimated to be approximately 0.26 Wm−1 K−. The electrical resistivity was estimated to be 29 Ω cm. The figure of merit of MoS2 was estimated to be 1.99 × 10−4.

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“…[198,199] Therefore, these materials have received a lot of attention for their potential in thermoelectricity output. [200,201] Table 1 summarizes the key properties of 2D TMDCs applicable to various energy harvesting applications. In essence, 2D TMDCs have a multitude of tuneable characteristics that allow for functionalization with a wide range of polymer materials.…”

Realization of low potential barrier in MoS2/rGO heterojunction with enhanced electrical conductivity for thin film thermoelectric applications

“…The postsulfurization method increased the crystalline size and the energy filtering effect which further enhanced the σ of 53 S m −1 for MoS 2 film [9]. In a micrometer 2D thin-film MoS 2 , the σ of 3.4 S m −1 [10] is obtained even at a temperature gradient of 40 °C. Recently, a few layer MoS 2 has achieved a maximum σ of 10.9 S cm −1 at 734 K and decoupled S and σ dependency with controlled lattice dynamics by a reduced phonon lifetime of out plane mode [11].…”