Thermoelectric Properties of Spark Plasma-Sintered In4Se3-In4Te3

Abstract

%)/In 4 Te 3 (20 wt.%) mixture samples were prepared. In 4 Se 3 and In 4 Te 3 powders were synthesized by a conventional melting process in evacuated quartz ampoules, and a spark plasma method was used for the sintering of the pure In 4 Se 3 and mixture samples. Thermoelectric and structural characterizations were carried out, and the mixing effect of In 4 Se 3 and In 4 Te 3 on the thermoelectric properties was investigated.

Advanced Thermoelectric Design: From Materials and Structures to Devices

“…Generally, the holes in p-type semiconductors and the electrons in n-type semiconductors are called major carriers, while the electrons in p-type semiconductors and the holes in n-type semiconductors are called minor carriers. The relationships between n or p (here taking n as an example) and S , σ, and κ can be described as where k B is the Boltzmann constant, e is the electrical charge, h is the Planck constant, m * is the carrier effective mass, μ is the carrier mobility, D T is the thermal diffusivity, C p is the specific heat, ρ is the mass density, and L is the Lorenz number. These equations indicate that values of S , σ, and κ e should be balanced to optimize ZT , as illustrated in Figure a.…”