2009
DOI: 10.1016/j.jallcom.2008.09.202
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Thermoelectric properties of Zn–Sb alloys doped with In

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Cited by 21 publications
(11 citation statements)
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“…Many measures have been taken in an attempt to improve the thermoelectric figure of merit, such as the investigations of fabrication and doping or solid solution of foreign elements [46]. Furthermore, a thermoelectric module can generally be constructed using a unicouple of p - and n -type semiconductors.…”
Section: Introductionmentioning
confidence: 99%
“…Many measures have been taken in an attempt to improve the thermoelectric figure of merit, such as the investigations of fabrication and doping or solid solution of foreign elements [46]. Furthermore, a thermoelectric module can generally be constructed using a unicouple of p - and n -type semiconductors.…”
Section: Introductionmentioning
confidence: 99%
“…Doping of ␤-Zn 4 Sb 3 has been suggested as a possible approach to improve the stability and optimize the thermoelectric properties by reducing thermal conductivity and changing the carrier concentration. In recent years, doping of Cd, Hg, Mg, In, Cu, Se and Ag in Zn 4 Sb 3 has been reported [17][18][19][20][21][22][23]. These studies showed that when doped Zn 4 Sb 3 with Cd, In or Mg, the thermoelectric performance was not improved obviously.…”
Section: Introductionmentioning
confidence: 99%
“…The traditional strategy of doping has been widely explored to improve the TE properties by tuning the carrier concentration to optimize the power factor (S 2 σ). Dopants, such as Cd [9], Al [10], Ga [10], In [10,11], Hg [12], Nb [13], Te [14,15], Mg [16,17], Ag [18,19], Cu [18], I [20], Se [21], Fe [22], Bi [23], and Pb [24], have been investigated in β-Zn 4 Sb 3 so far. However, most of the above investigations (including Ag doping) were done below room temperature.…”
Section: Introductionmentioning
confidence: 99%