Thermoelectric transport in ZnO and GaN nanowires

Galagali, S. M.; Sankeshwar, N. S.; Mulimani, B. G.

doi:10.1016/j.jpcs.2015.03.016

Cited by 5 publications

(2 citation statements)

References 32 publications

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“…GaN and ZnO are suitable for applications in optoelectronics high temperature, high frequency and high power devices [79]. GaN and ZnO are the most wide bandgap semiconductor materials that have been recently attracting much interest due to their promise for application in electronic and optoelectronic devices [80].…”

Section: Gan and Zno Propertiesmentioning

confidence: 99%

Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Nahhas¹

2018

NANO

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This paper presents a review of recent advances of Gallium Nitride (GaN) and Zinc Oxide (ZnO) based hybrid structures materials and devices. GaN and ZnO have gained substantial interest in the research area of wide bandgap semiconductors due to their unique electrical, optical and structural properties. GaN and ZnO are important semiconductor materials with applications in blue and ultraviolet (UV) optoelectronics. Both materials have similar physical properties. GaN and ZnO as hybrid material have received much attention due to their unique potential applications. Several potential optical applications are being fabricated based on GaN and ZnO hybrid materials such as optical wave guide, light emitting diodes (LEDs), and laser diodes (LDs). The recent aspects of GaN and ZnO hybrid based devices are presented and discussed.

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Section: Gan and Zno Propertiesmentioning

confidence: 99%

Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Nahhas¹

2018

NANO

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“…Typically, the backbone nanowire core of 3D branched nanostructures needs to possess a high electrical conductivity to facilitate the transport of photogenerated electrons. The high electron mobility of GaN NW ranging from 2 to 30 cm 2 /V·s and the matched lattice parameters between (GaN) 1– x (ZnO) x and GaN will make GaN nanowire (GaN NW) arrays become a suitable candidate for the trunk of 3D branched (GaN) 1– x ( ZnO ) x nanostructures.…”

Section: Introductionmentioning

confidence: 99%

Cobalt Phosphate-Modified (GaN)_1–x(ZnO)_x/GaN Branched Nanowire Array Photoanodes for Enhanced Photoelectrochemical Performance

Chen

Hua

et al. 2023

ACS Appl. Energy Mater.

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Photoelectrochemical water splitting based on suitable catalysts has attracted wide attention as a promising strategy to utilize solar energy to produce clean and renewable hydrogen fuel. Herein, we reported cobalt phosphate-modified (GaN)1–x (ZnO) x /GaN nanowire arrays on a high-temperature conductive GaN substrate toward enhanced photoelectrochemical water splitting by a facile two-step Au-assisted chemical vapor deposition method. The highly conductive Si-doped GaN substrate is designed to serve as a current collector and epitaxial substrate to grow GaN nanowires at high temperature. Meanwhile, high density of branched (GaN)1–x (ZnO) x nanowires with a tunable band gap, strong visible-light absorption, and high catalytic activity is deposited on the surface of GaN nanowires to act as active components to harvest light toward the oxygen evolution reaction. Such multi-junction heterostructures effectively enhance wide spectral utilization and light absorption and simultaneously accelerate the separation of electrons and holes and the transfer of photogenerated electrons from (GaN)1–x (ZnO) x nanowires to the GaN substrate collector and Pt electrode. The photocurrent density of the (GaN)1–x (ZnO) x /GaN nanowire array photoanode can reach 37.5 μA cm–2 at 1.23 V vs reversible hydrogen electrode and could be further enhanced to 186 μA cm–2 by modifying the cobalt phosphate cocatalyst, showing promising potential in clean hydrogen production.

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Investigation of large Seebeck effect by charge mobility engineering in CuAlO2 thin films grown on Si substrate by thermal evaporation

Mahmood

Abbasi

Zahra

et al. 2018

Ceramics International

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Thermoelectric transport in ZnO and GaN nanowires

Cited by 5 publications

References 32 publications

Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Cobalt Phosphate-Modified (GaN)_1–x(ZnO)_x/GaN Branched Nanowire Array Photoanodes for Enhanced Photoelectrochemical Performance

Investigation of large Seebeck effect by charge mobility engineering in CuAlO2 thin films grown on Si substrate by thermal evaporation

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Thermoelectric transport in ZnO and GaN nanowires

Cited by 5 publications

References 32 publications

Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Cobalt Phosphate-Modified (GaN)1–x(ZnO)x/GaN Branched Nanowire Array Photoanodes for Enhanced Photoelectrochemical Performance

Investigation of large Seebeck effect by charge mobility engineering in CuAlO2 thin films grown on Si substrate by thermal evaporation

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Cobalt Phosphate-Modified (GaN)_1–x(ZnO)_x/GaN Branched Nanowire Array Photoanodes for Enhanced Photoelectrochemical Performance