Thermoelectric transport of massive Dirac fermions in bilayer graphene

Nam, Seung Geol; Ki, Dong–Keun; Lee, Hu Jong

doi:10.1103/physrevb.82.245416

Cited by 76 publications

(77 citation statements)

References 34 publications

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“…Thermoelectric measurement 11 shows that the roomtemperature thermopower with a bias voltage can be enhanced by a factor of 4 compared to that of monolayer graphene or unbiased bilayer graphene, making it a more promising candidate for future thermoelectric applications. Theoretical calculations from the tight-binding models for monolayer and bilayer graphene 12,13 are in agreement with the experimental observations [1][2][3]11,14 .…”

supporting

confidence: 79%

Stacking-order dependence in thermoelectric transport of biased trilayer graphene

Sheng

Liu

2012

Phys. Rev. B

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We numerically study the thermoelectric and thermal transport in trilayer graphene with different stacking orders in the presence of interlayer bias under a strong perpendicular magnetic field. In biased ABA-stacked case, we find that the thermoelectric conductivity displays different asymptotic behaviors with the varying of the temperature, similar to that of monolayer graphene. In the high temperature regime, the transverse thermoelectric conductivity αxy saturates to a universal value 2.77kB e/h at the center of each LL, while it displays a linear temperature dependence at low temperatures limit. The calculated transverse thermal conductivity κxy exhibits two plateaus away from the band center. The transition between the two plateaus is continuous, which is accompanied by a pronounced peak in the longitudinal thermal conductivity κxx. In biased ABC-stacked case, it is found that both the thermoelectric conductivity and thermal conductivity have similar properties to the biased bilayer graphene, which is consistent with the behavior of a band insulator. The obtained results demonstrate the sensitivity of the thermoelectric conductivity to the band gap near the Dirac point. We also verify the validity of the Mott-relation and the generalized Wiedemann-Franz law.

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supporting

confidence: 79%

Stacking-order dependence in thermoelectric transport of biased trilayer graphene

Sheng

Liu

2012

Phys. Rev. B

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“…In particular, its high mobility, which due to the weak electron-phonon interaction persists up to room temperature, can be orders of magnitude higher than in other 2D thermoelectric materials, such as semiconducting transition metal dichalcogenides (13)(14)(15)(16). Theoretical and experimental studies show that the Seebeck coefficient in graphene could reach values comparable to that in bulk semiconductors by decreasing the carrier density (17)(18)(19)(20)(21)(22)(23). The combination of graphene's large mobility and competitive Seebeck coefficient result in large power factor and large active cooling.…”

Section: ·Kmentioning

confidence: 99%

High thermoelectricpower factor in graphene/hBN devices

Duan

Wang

Lai

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

145

133

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Fast and controllable cooling at nanoscales requires a combination of highly efficient passive cooling and active cooling. Although passive cooling in graphene-based devices is quite effective due to graphene's extraordinary heat conduction, active cooling has not been considered feasible due to graphene's low thermoelectric power factor. Here, we show that the thermoelectric performance of graphene can be significantly improved by using hexagonal boron nitride (hBN) substrates instead of SiO 2 . We find the room temperature efficiency of active cooling in the device, as gauged by the power factor times temperature, reaches values as high as 10.35 W·m , in MoS 2 . We further show that the Seebeck coefficient provides a direct measure of substrate-induced random potential fluctuations and that their significant reduction for hBN substrates enables fast gate-controlled switching of the Seebeck coefficient polarity for applications in integrated active cooling devices.graphene | Seebeck coefficient | thermoelectric power factor | electron-hole puddles | screened Coulomb scattering

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“…Graphene (monolayer [38,39] and bilayer [40]) exfoliated on a SiO 2 =Si substrate, for example, provides a significant thermoelectric response and the usual temperature dependence of S can be overcome on a SiC substrate [41]. Performance improvements have been achieved through O plasma treatment [42] and molecular decoration [43].…”

Section: Introductionmentioning

confidence: 99%

Arsenene and Antimonene: Two-Dimensional Materials with High Thermoelectric Figures of Merit

2017

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We study the thermoelectric properties of As and Sb monolayers (arsenene and antimonene) using density-functional theory and the semiclassical Boltzmann transport approach. The materials show large band gaps combined with low lattice thermal conductivities. Specifically, the small phonon frequencies and group velocities of antimonene lead to an excellent thermoelectric response at room temperature. We show that n-type doping enhances the figure of merit.

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Thermoelectric transport of massive Dirac fermions in bilayer graphene

Cited by 76 publications

References 34 publications

Stacking-order dependence in thermoelectric transport of biased trilayer graphene

Stacking-order dependence in thermoelectric transport of biased trilayer graphene

High thermoelectricpower factor in graphene/hBN devices

Arsenene and Antimonene: Two-Dimensional Materials with High Thermoelectric Figures of Merit

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