Single phase of BaIrO 3 powders, dense bulks, and thin films were prepared by re-calcination method, spark plasma sintering (SPS) technique, and pulsed laser deposition (PLD) technique, respectively. The phase evolutions, crystallinity, microstructure and electrical properties of samples were investigated. BaIrO 3 powders obeyed normal distribution with D AV =1.68 μm; BaIrO 3 bulks were densified by SPS technique at 950-1050°C under a pressure of 30 MPa, showing a dense microstructure and the highest relative density of about 96.8 %. The room temperature bulks resistance and carrier mobility were about 3×10 −4 Ω m and 4×10 −2 m 2 V −1 s −1 , respectively. Besides, BaIrO 3 thin films with a slightly Ir deficiency were successfully prepared on Si(111) substrates at a deposition temperature of 200-400°C by PLD technique, which was accompanied by the formation of Ir-rich composition on the surface of the laser-ablated polycrystalline BaIrO 3 target. The reason for the Ir deficiency of BaIrO 3 films was explained in this study.