Thermomechanical behavior of different texture components in Cu thin films

Baker, Shefford P.; Kretschmann, A.; Arzt, Eduard

doi:10.1016/s1359-6454(01)00127-6

Cited by 136 publications

(89 citation statements)

References 22 publications

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“…Understanding the mechanical behavior of metal thin films at elevated temperature is essential for the design of reliable devices, which often operate above room temperature. Several studies have been performed on the high-temperature behavior of films on substrates [2,[16][17][18][19], but studies on freestanding films have been limited to temperatures below 200ºC [20][21][22][23] due to difficulties associated with sample handling, oxidation, and temperature uniformity in the sample. The few studies performed at higher temperatures focused on films that were several microns thick [24][25][26].…”

Section: Introductionmentioning

confidence: 99%

High-temperature tensile behavior of freestanding Au thin films

Sim

Vlassak

2014

Scripta Materialia

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The mechanical behavior of freestanding thin sputter-deposited films of Au is studied at temperatures up to 340°C using tensile testing. Films tested at elevated temperatures exhibit a significant decrease in flow stress and stiffness. Furthermore the flow stress decreases with decreasing film thickness, contravening the usual notion that "smaller is stronger". This behavior is attributed mainly to diffusion-facilitated grain boundary sliding.Keywords: In situ tensile test, High-temperature deformation, Thin films, Grain boundary sliding, Creep IntroductionThe decreasing size of microelectronics devices has motivated a strong interest in the effects of length scales on the mechanical behavior of thin films of metal. As a result, metal thin films, which are key components in these devices, have been studied extensively. These investigations have demonstrated that the mechanical properties of thin films are generally very different from those of their bulk counterparts [1][2][3][4][5][6][7][8][9][10][11] and that they depend on whether the film is freestanding or supported by a substrate [12][13][14][15]. Understanding the mechanical behavior of metal thin films at elevated temperature is essential for the design of reliable devices, which often operate above room temperature. Several studies have been performed on the high-temperature behavior of films on substrates [2,[16][17][18][19], but studies on freestanding films have been limited to temperatures below 200ºC [20][21][22][23] due to difficulties associated with sample handling, oxidation, and temperature uniformity in the sample. The few studies performed at higher temperatures focused on films that were several microns thick [24][25][26]. Thus, the high-temperature behavior of freestanding metal thin films is still relatively unexplored. Recently, we developed a technique for the tensile testing of freestanding thin films in which samples were mounted on a micro-machined silicon frame with integrated heaters [27]. The samples were deformed in-situ inside a scanning electron microscope (SEM) by means of a custom-built test apparatus. Using this technique, the stress-strain curves of copper thin films were measured at temperatures up to 430°C. In this paper, the same technique is used to characterize the mechanical behavior of gold films as a function of temperature and strain rate. Gold was chosen as the material of interest due to its oxidation resistance and low electrical resistivity. The oxidation resistance makes gold an interesting material for studying the inherent mechanical behavior at elevated temperature without the added complication of a passivation

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Section: Introductionmentioning

confidence: 99%

High-temperature tensile behavior of freestanding Au thin films

Sim

Vlassak

2014

Scripta Materialia

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“…A multiple energy ͑0. 7, 0.9, 1.2, 1.5 MeV͒, multiple dose ͑2.1, 4.2, 5.2, 7.2ϫ 10 16 cm −2 ͒ implant sequence yielded a Cu atomic concentration of ϳ3.6 at. % at ϳ0.6− 1.0 m depth.…”

Section: Methodsmentioning

confidence: 98%

“…They have been described as preferred orientations that are the result of low surface and interfacial energy and also because of their ability to accommodate the effects of stress, with the ͕111͖ orientation several times more accommodative in terms of modulus than the ͕100͖ orientation for Cu on Si 3 N 4 on Si, Cu on Si, Au, and Au-Cu embedded in SiO 2 . [7][8][9][10] …”

Section: -2mentioning

confidence: 99%

Structural and elastic characterization of Cu-implanted SiO2 films on Si(100) substrates

Shirokoff

Young

Brits

et al. 2007

Journal of Applied Physics

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Why does the second peak of pair correlation functions split in quasi-two-dimensional disordered films? Appl. Phys. Lett. 102, 071907 (2013) Low-bias electron transport properties of germanium telluride ultrathin films J. Appl. Phys. 113, 063711 (2013) P(VDF-TrFE-CFE) terpolymer thin-film for high performance nonvolatile memory Appl. Phys. Lett. 102, 063103 (2013) Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction Appl. Phys. Lett. 102, 031914 (2013) Effects of grain microstructure on magnetic properties in FePtAg-C media for heat assisted magnetic recording J. Appl. Phys. 113, 043910 (2013) Additional information on J. Appl. Phys. Cu-implanted SiO 2 films on Si͑100͒ have been studied and compared to unimplanted SiO 2 on Si͑100͒ using x-ray methods, transmission electron microscopy, Rutherford backscattering, and Brillouin spectroscopy. The x-ray results indicate the preferred orientation of Cu ͕111͖ planes parallel to the Si substrate surface without any directional orientation for Cu-implanted SiO 2 /Si͑100͒ and for Cu-implanted and annealed SiO 2 /Si͑100͒. In the latter case, transmission electron microscopy reveals the presence of spherical nanocrystallites with an average size of ϳ2.5 nm. Rutherford backscattering shows that these crystallites ͑and the Cu in the as-implanted film͒ are largely confined to depths of 0.4− 1.2 m below the film surface. Brillouin spectra contain peaks due to surface, film-guided and bulk acoustic modes. Surface ͑longitudinal͒ acoustic wave velocities for the implanted films were ϳ7% lower ͑ϳ2% higher͒ than for unimplanted SiO 2 /Si͑100͒. Elastic constants were estimated from the acoustic wave velocities and film densities. C 11 ͑C 44 ͒ for the implanted films was ϳ10% higher ͑lower͒ than that for the unimplanted film. The differences in acoustic velocities and elastic moduli are ascribed to implantation-induced compaction and/or the presence of Cu in the SiO 2 film.

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“…The three grain orientations that are the most common in copper films, those with (111), (100) or (110) planes parallel to the substrate surface. [1][2][3] In such fiber texture, the in-plane orientations of grains are generally random with respect to rotation about the axis normal to the preferred orientation plane. Further rotational alignment of the fiber-textures grains in films would be ideal for many properties and in fact is a goal of over three decades efforts in film technology.…”

Section: Introductionmentioning

confidence: 99%

Texture of Electroplated Copper Film under Biaxial Stress

2006

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The stresses and the textures of electroplated copper films were studied using the X-ray diffraction analysis. The results show that the stresses in the films are always tensile. The films have (110) fiber texture at different thickness from 8 to 60 mm. From strain energy minimization point of view, the grains with (110) orientation should be favorable in these films. A further planar texture on top of the fiber texture was developed. It could be explained by elastic anisotropy at different orientation in grain.

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Thermomechanical behavior of different texture components in Cu thin films

Cited by 136 publications

References 22 publications

High-temperature tensile behavior of freestanding Au thin films

High-temperature tensile behavior of freestanding Au thin films

Structural and elastic characterization of Cu-implanted SiO2 films on Si(100) substrates

Texture of Electroplated Copper Film under Biaxial Stress

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