We report on the fabrication and characterization of a device which allows the formation of an antidot lattice (ADL) using only electrostatic gating. The antidot potential and Fermi energy of the system can be tuned independently. Well defined commensurability features in magnetoresistance as well as magnetothermopower are obsereved. We show that the thermopower can be used to efficiently map out the potential landscape of the ADL.A two dimensional electron system (2DES) with a regular array of scatterers is referred to as an antidot lattice (ADL). Over the past two decades, such systems have been studied in great detail revealing a variety of intriguing physical phenomena, ranging from classical pinned orbits in magnetic fields (commensurability) [1] to Ahoronov-Bohm type quantum interference effects [2]. Recently, there has been a renewed interest in ADLs, as it has been shown that they can alter the band structure of a system, resulting in modified optical [3] and electrical [4] properties. ADLs are usually fabricated by the physical removal of material (etching) in the desired region, resulting in a fixed potential profile in the underlying 2DES [1]. Less destructive techniques such as local oxidation [5] or electrostatic gating [6] have also been employed in the fabrication of ADLs. However, none of the existing techniques allow for an independent variation of the antidot potential (U AD ) and the Fermi energy (E F ) of the electron sea between the antidots. The fabrication of such devices with independent tunability of U AD and E F , would allow for a systematic study of the interplay between these two relevant energy scales. In view of recent proposals for scalable spin-based quantum information processing devices in ADLs [7,8], this tunability is highly desirable. Furthermore, recent studies in 2D mesoscopic devices in GaAs/AlGaAs heterostructures have revealed the possibility of the existence of spin correlated systems formed due to the existence of intrinsic potential modulations within the 2DES [9]. Such tunable devices provide the possibility of realizing well-ordered artificial spin-lattices with tunable magnetism in a semiconductor environment. In this Letter, we describe the properties of ADLs which are induced solely by electrostatic gating. We perform magnetoresistance (MR) and magnetothermopower (MTP) studies to show that U AD and E F can be controlled independently. We also show that thermopower (TP) is an extremely sensitive tool to study the potential landscape of the ADL system. Silicon δ-doped GaAs/AlGaAs heterostructures with a 30 nm spacer layer with an as-grown number density of 4×10 15 m −2 , and low temperature mobility of 230 m 2 /Vs (corresponding to an elastic mean free path ∼ 20 µm ) were used in our experiments.Figure 1(a) shows a schematic of the device structure. Following the definition of a mesa by wet etching, standard electron beam lithography and lift-off techniques were used to obtain a metallic (Ti/Au) perforated gate (PG). The antidot diameter (d) and spacing (a) are fi...