Thermoreflectance spectra of Cd3As2

Bhola, V.P.

doi:10.1016/0022-3697(77)90021-x

Cited by 5 publications

(1 citation statement)

References 4 publications

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“…3. On the other hand, the resonant enhancement of the band a t about 300 cm-l, when the incident light frequency increased, would arise from the interband electronic RS process in which the frequency of the incident light is in the vicinity of the maximum in the joint density of e-h pair states a t 2.8 eV [7,8,151. This maximum is attributed to the Xl-X, transition.…”

Section: Discussionmentioning

confidence: 99%

Some aspects of raman scattering in Cd₃As₂ single crystals

Weszka¹,

Renucci²,

Zwick³

1986

Physica Status Solidi (b)

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Raman scattering measurements in the tetragonal CdSAs, single crystals are carried out a t temperatures of 300 and 77 K. The spectra obtained are interpreted in terms of phonon-electron and electron-electron interactions. The features in the low-frequency interval are due to contributions from phonon and single particle scattering. The electronic RS involving intra-and interband excitations is dominant a t frequencies higher than 80 cm-l. The resonant enhancement of the band a t 300 cm-l arises from the incident light frequency being in the vicinity of El -C4.La diffusion Raman dans les mono-cristaux de C%As, quadratique a &tit BtudiBe Q 300 et 77 K. Les spectres Raman obtenus sont interprBt6s en termes des interactions un phonon-electron etBlectron-6lectron. Des spectres en region de basses frkquences sont attribuks Q la diffusion It un phonon et It une particule. Cependant la diffusion Raman faisant intervenir des excitations Blectroniques intra-et interbandes est dominant aux frhquences au-dessus de 80 cm-l. Une croissance resonante d'une bande Q 300 cm-l resulte du voisinage des Bnergies de raie incidente et un seuil d'excitation El -E4.

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Section: Discussionmentioning

confidence: 99%