2017
DOI: 10.1016/j.diamond.2017.07.002
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Thick CVD diamond films grown on high-quality type IIa HPHT diamond substrates from New Diamond Technology

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Cited by 49 publications
(28 citation statements)
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“…Other impurities may also be incorporated in significant amounts including solvents from the melted baths (Ni and Co) or element contaminations (B, Si, Ge) which can lead to the appearance of specific defects or colouring [73]. Around 50 ppm of boron have been measured in some of the purest type IIa diamonds [74]. Boron is known to stabilize the neutral charge state of NV centres and is usually not desirable (see part 4.4).…”
Section: Hpht Grown Diamondsmentioning
confidence: 99%
“…Other impurities may also be incorporated in significant amounts including solvents from the melted baths (Ni and Co) or element contaminations (B, Si, Ge) which can lead to the appearance of specific defects or colouring [73]. Around 50 ppm of boron have been measured in some of the purest type IIa diamonds [74]. Boron is known to stabilize the neutral charge state of NV centres and is usually not desirable (see part 4.4).…”
Section: Hpht Grown Diamondsmentioning
confidence: 99%
“…Suppressing the defects in diamonds is key for using diamonds in next‐generation semiconductor devices, thus motivating research on the basic theory of chemical vapor deposition (CVD) single‐crystal growth diamonds. Currently, research on the basic theory of CVD diamond growth is mainly focused on the growth mechanism of CVD single‐crystal diamonds, nitrogen doping, and its influence on the growth rate of single‐crystal diamonds, and controlling defects in single‐crystal diamonds …”
Section: Introductionmentioning
confidence: 99%
“…Related to the enlargement of single‐crystal diamond using CVD technique, many studies and developments have been undertaken to meet demands for substrates used to manufacture semiconductor devices . Mokuno et al used a lift‐off method to develop a 10‐mm‐square self‐standing single‐crystal diamond film manufactured from a high‐pressure/high‐temperature (HP/HT) type Ib substrate.…”
Section: Introductionmentioning
confidence: 99%