2000
DOI: 10.1088/0960-1317/10/2/302
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Thick-layer resists for surface micromachining

Abstract: Interest in thick-photoresist applications is steadily growing. In addition to bump fabrication and wire interconnect technology (WIT), the process of patterning thick-layer photoresists by UV lithography is specially qualified for applications in microelectromechanical systems (MEMS). Specialized equipment and new photoresists have been developed or are under development to cope with the new challenges in the field of preparing extremely thick photoresist layers, the process of patterning these thick resists,… Show more

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Cited by 57 publications
(44 citation statements)
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“…Feature heights have increased significantly with the development of new thick-layer resists [27], [28]. The main advantage of metal micromachining is its low temperature, which has allowed postprocessing of MEMS onto completed circuits [29].…”
Section: B Other Surface Micromachining Processesmentioning
confidence: 99%
“…Feature heights have increased significantly with the development of new thick-layer resists [27], [28]. The main advantage of metal micromachining is its low temperature, which has allowed postprocessing of MEMS onto completed circuits [29].…”
Section: B Other Surface Micromachining Processesmentioning
confidence: 99%
“…Unlike traditional photoresists, which are restricted to a layer thickness on the order of 10 m, SU-8 allows one to build thick (up to 1 mm) and high-aspect-ratio structures (Leochel, 2000). SU-8 100, the most viscous one in this series of resists, was used in this study to build channels with a depth up to 650 m.…”
Section: Microfluidic Channelmentioning
confidence: 99%
“…While inclined sidewalls will not undermine the performance of the microfluidic channel, their presence complicates accurate measurements of the true dimensions of the channel, in addition to complicating CFD simulations of the flow. Leochel (2000) reported that the gap between the photomask and the resist and the associated diffraction were the major causes of nonvertical sidewalls. In this study, it was also found that the slope of the sidewall was related to the postexposure baking temperature and duration.…”
Section: Microfluidic Channel Constructionmentioning
confidence: 99%
“…Because of the isotropic etching profile, the pitch between nearby turns is limited. To reduce the winding pitch, alternative methods are mould-based electroplating 19,20,43 and anisotropic plasma etching of Cu [44][45][46] .…”
Section: Copper Electroplating and Wet Etchingmentioning
confidence: 99%