Thickness Dependence of Electrical and Structural Properties of FTO Films

Abstract

Fluorine (0.8 M) doped tin oxide films of various thicknesses were prepared on heated glass substrates (520 "C) by spray pyrolysis technique. The chemical and thermal stabilities of FTO films were found to be very good. The characterization has been done by XRD and found to agree with the reported results. As thickness of the film increases, intensities of peaks increased. From the X-ray diffraction data, grain size of the crystallites have been calculated. The electrical and structural properties were studied for different thicknesses. Hall measurements showed that thicker films have relatively high Hall mobilities compared to those of thinner films. The high carrier concentration showed that the films are degenerate. The relationship between carrier concentration and Hall mobility revealed that the ionized impurity scattering centres were the dominant cause of scattering.

Enhanced transparent-conducting fluorine-doped tin oxide films formed by Aerosol-Assisted Chemical Vapour Deposition

“…It also gives rise to a highly facetted lm morphology (see Table 1). [36][37][38][39] There is a greater degree of SnO 2(110) growth under nitrogenous conditions and a general trend towards this orientation overall with deposition temperature. This plane correlates to the most dense crystallographic direction and in other systems corresponds to uorine substitution into oxygen vacancies.…”

Electrocatalytic Activity of Graphene Multilayers toward I−/I3−: Effect of Preparation Conditions and Polyelectrolyte Modification

“…[1][2][3] Fluorine doped tin oxide (FTO) and indium tin oxide (ITO) are routinely used as transparent conductive electrode (TCE) materials because they fulfill the requirements of high transparency and low resistance. 4,5 Despite the advantages of FTO and ITO, these TCEs still incur high material and production costs. 6 Thus, it would be desirable to develop a lowcost alternative.…”

Template-Free Nanostructured Fluorine-Doped Tin Oxide Scaffolds for Photoelectrochemical Water Splitting

“…The lower value of 3.75 Ω/sq for the nanostructured sample is to be expected due to the noticeably thicker film in the nanostructured samples, as higher FTO thickness is known to improve conductivity. 32,33 While commercial TEC 15 FTO shows an average thickness of 380 ± 15 nm, the nanostructured FTO samples grown directly on commercial FTO present a much higher base thickness ranging from 850 to 950 nm. Given that the charge carrier mobility and electrical conductivity in FTO are directly proportional to crystallite size and layer thickness, contrary to what happens with other types of nanostructured scaffolds, our USP-prepared FTO scaffold not only serves as a high-area substrate and current collector but also decreases the final sheet resistance of the photoelectrode.…”