Thickness dependence of the magnetoelectric coupling in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si27.svg"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Fe</mml:mi></mml:mrow><mml:mrow><mml:mn>89</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si28.svg"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>11</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:mat

Jiménez, María Julia; Cabeza, Gabriela F.; Gómez, J.; Rodriguez, D. Velázquez; Leiva, Livio; Milano, J.; Butera, A.

doi:10.1016/j.jmmm.2019.166361

Cited by 16 publications

(6 citation statements)

References 35 publications

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“…S3(a) supplemental material). The value of , used to estimate the parameters shown in Table III, was obtained 𝑔 = 2.08(1) from W-band resonance field data parallel and perpendicular to the film plane, which are consistent with values reported in other Fe-rich alloys [24,25,27]. The good fitting for different excitation frequencies with a single set of parameters supports the validity of the proposed model.…”

Section: Fmr Measurements and Analysissupporting

confidence: 82%

Relaxation mechanisms in ultra-low damping Fe80Co20 thin films

Rodriguez

Gómez

Alejandro

et al. 2020

Journal of Magnetism and Magnetic Materials

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Section: Fmr Measurements and Analysissupporting

confidence: 82%

Relaxation mechanisms in ultra-low damping Fe80Co20 thin films

Rodriguez

Gómez

Alejandro

et al. 2020

Journal of Magnetism and Magnetic Materials

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“…Article 24 examined the effect an electric field on the magnetic response of thin films ( , 11, 17, 22 and 28 nm) deposited on ferroelectric PMN-PT single crystals. When applying an electric field, hysteresis loops are modified, which is consistent with a positive magnetostriction constant.…”

Section: Discussionmentioning

confidence: 99%

Composition of the Frenkel–Kontorova and Ising models for investigation the magnetic properties of a ferromagnetic monolayer on a stretching substrate

Белим

Tikhomirov

2021

Sci Rep

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In the article, computer simulation on the behavior of a ferromagnetic thin film on a non-magnetic substrate by computer simulation is performed. The substrate is described by the two-dimensional Frenkel–Kontorova potential. The Ising model is used to describe the magnetic properties of a two-dimensional ferromagnetic film. The Wolf cluster algorithm is used to model the magnetic behavior of the film. A square lattice is considered for an unperturbed ferromagnetic film. Computer simulations show that mismatch of film and substrate periods results in film splitting into regions with different atomic structures. Magnetic properties for the obtained structure have been investigated. The hysteresis loop is calculated using the Metropolis algorithm. Deformations of the substrate lead to a decrease in the phase transition temperature. The Curie temperature decreases both when the substrate is compressed and when stretched. The change in phase transition temperature depends on the decreasing rate of exchange interaction with distance and the amplitude of interaction with the substrate. When the substrate is compressed, an increase in the amplitude of the interaction between the film and the substrate results in an increase in the phase transition temperature. The opposite effect occurs when the substrate is stretched. The hysteresis loop changes its shape and parameters when the substrate is deformed. Compression and stretching of the substrate results in a decrease in coercive force. The reduction in coercive force when compressing the substrate is greater than when stretching. The magnetization of the film is reduced by deformations at a fixed temperature.

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“…Kinks existing at the domain walls of PMN–PT are also observed in the surface morphology in graphene/PMN–PT heterostructures, which could enhance the charge trapping effects at the interface between the graphene and ferroelectric materials . Moreover, the different orientations of the PMN–PT substrates can bring diverse ferroelectric and piezoelectric characteristics, which can affect the modulation of the PMN–PT substrates. − For example, the easy magnetization direction of Fe 89 Ga 11 films deposited on PMN–PT (011) substrates was rotated when applying an electric field, while a similar effect was not observed for those deposited on PMN–PT (001) . Furthermore, defects can also be modulated under an external electric field. , The oxygen vacancies in TiO 2−δ /PMN–PT and Zn:SnO 2 /PMN–PT heterostructures migrate under an external electric field, which contributes to the nonvolatile resistive switching. , Therefore, the electrical characteristics of semiconductor films can be tuned by PMN–PT with different orientations and the migration of defects.…”

Section: Introductionmentioning

confidence: 99%

“…23−25 For example, the easy magnetization direction of Fe 89 Ga 11 films deposited on PMN−PT (011) substrates was rotated when applying an electric field, while a similar effect was not observed for those deposited on PMN−PT (001). 26 Furthermore, defects can also be modulated under an external electric field. 27,28 The oxygen vacancies in TiO 2−δ /PMN−PT and Zn:SnO 2 /PMN−PT heterostructures migrate under an external electric field, which contributes to the nonvolatile resistive switching.…”

Section: ■ Introductionmentioning

confidence: 99%

Tuning the Semiconducting Properties in Co₃O₄/PMN–PT Heterostructures by Oxygen Vacancies and Domain Structure

Wang

Chen

et al. 2022

ACS Appl. Electron. Mater.

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Epitaxial Co3O4 films with various oxygen vacancy densities were deposited on the (001)-, (011)-, and (111)-0.7Pb(Mg1/3Nb2/3)–0.3PbTiO3 (PMN–PT) substrates to modulate the electrical properties. Experiment and calculation results demonstrate that the oxygen vacancies can reduce the resistivity of Co3O4 films. Meanwhile, the resistivity of Co3O4 films decreases in the order of (111) > (011) > (001) due to the various ferroelectric domain densities of PMN–PT substrates. The Co3O4/PMN–PT (001) heterostructure exhibits the lowest resistivity of 1.7 Ω cm at room temperature under the influence of oxygen vacancies and the ferroelectric domain. The maximum relative resistance variation of Co3O4 films reaches 200% under an external electric field as the result of the ferroelectric-field effect and the migration of oxygen vacancies. This work provides a powerful way to modulate the electrical properties of Co3O4 films and further broadens the application of Co3O4.

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Thickness dependence of the magnetoelectric coupling inFe89Ga11

Cited by 16 publications

References 35 publications

Relaxation mechanisms in ultra-low damping Fe80Co20 thin films

Relaxation mechanisms in ultra-low damping Fe80Co20 thin films

Composition of the Frenkel–Kontorova and Ising models for investigation the magnetic properties of a ferromagnetic monolayer on a stretching substrate

Tuning the Semiconducting Properties in Co₃O₄/PMN–PT Heterostructures by Oxygen Vacancies and Domain Structure

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Thickness dependence of the magnetoelectric coupling inFe89Ga11

Cited by 16 publications

References 35 publications

Relaxation mechanisms in ultra-low damping Fe80Co20 thin films

Relaxation mechanisms in ultra-low damping Fe80Co20 thin films

Composition of the Frenkel–Kontorova and Ising models for investigation the magnetic properties of a ferromagnetic monolayer on a stretching substrate

Tuning the Semiconducting Properties in Co3O4/PMN–PT Heterostructures by Oxygen Vacancies and Domain Structure

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Tuning the Semiconducting Properties in Co₃O₄/PMN–PT Heterostructures by Oxygen Vacancies and Domain Structure