2018
DOI: 10.1063/1.5040018
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Thickness-dependent crystal structure and electric properties of epitaxial ferroelectric Y2O3-HfO2 films

Abstract: The thickness dependences of the crystal structure and electric properties of (111)-oriented epitaxial 0.07YO1.5-0.93HfO2 (YHO7) ferroelectric films were investigated for the film thickness range of 10–115 nm. The YHO7 films were grown by pulsed laser deposition or sputtering at room temperature and subsequent heat treatment. As a substrate for the epitaxial growth of the YHO7 film, (111)-oriented 10 wt. % Sn-doped In2O3(ITO)//(111) yttria-stabilized zirconia was used. X-ray diffraction measurements confirmed … Show more

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Cited by 58 publications
(75 citation statements)
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“…[28,29] The details of the phase assignments can also be found in previous studies. [30,31] No spots are shown in Figure 1b, indicating that the 1100 C-treated film consists of the tetragonal phase because the existence of the other phase should lead to the appearance of the peak. On the other hand, two spots are shown in Figure 1a, which suggests the existence of monoclinic films.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…[28,29] The details of the phase assignments can also be found in previous studies. [30,31] No spots are shown in Figure 1b, indicating that the 1100 C-treated film consists of the tetragonal phase because the existence of the other phase should lead to the appearance of the peak. On the other hand, two spots are shown in Figure 1a, which suggests the existence of monoclinic films.…”
Section: Resultsmentioning
confidence: 99%
“…The targets for the deposition used the handmade sintered body. Obtained films were heat-treated using an image furnace under N 2 flow at 1000 or 1100 C for 10 s. [30][31][32] The crystalline phases of the films were examined using XRD (D8 Discover, Bruker) with a 2D detector. P-E hysteresis loops were measured at room temperature and 10 kHz by a ferroelectric tester (FCE-1, Toyo corp.).…”
Section: Methodsmentioning
confidence: 99%
“…[ 12 ] In lanthanide ion (such as La 3+ , Gd 3+ , and Y 3+ ) doped HfO 2 thin films robust polarizations in the range 8–25 μC cm −2 have been achieved. [ 13–17 ] In addition, the phase transition and polarization can also be optimized by annealing HfO 2 under asymmetrical stress, [ 3 ] introducing epitaxial strains from substrates, [ 18,19 ] and controlling the grain size in polycrystalline thin films. [ 20 ]…”
Section: Figurementioning
confidence: 99%
“…3,[6][7][8][9][10][11][12][13] The ferroelectric orthorhombic phase can be also stabilized in epitaxial films. [14][15][16][17][18][19][20][21] In epitaxial films, the orthorhombic phase is generally formed during deposition at high temperature, without need of annealing. [14][15][16][17][18][19][20] Epitaxial films are of high interest for better understanding of the properties of ferroelectric hafnia, as well as for prototyping devices with ultrathin films or having small lateral size, for which the higher homogeneity of epitaxial films respect to polycrystalline films is an advantage.…”
Section: Introductionmentioning
confidence: 99%
“…[14][15][16][17][18][19][20] Epitaxial films are of high interest for better understanding of the properties of ferroelectric hafnia, as well as for prototyping devices with ultrathin films or having small lateral size, for which the higher homogeneity of epitaxial films respect to polycrystalline films is an advantage. In spite of the evident interest, epitaxial ferroelectric hafnia is still in a nascent state, and few groups have reported epitaxial films on YSZ, [14][15][16]21,22 oxide perovskite, 17,19,23 and Si 18,20 substrates. Up to now, the epitaxial films have been grown by pulsed laser deposition (PLD), and only the influence of thickness has been discussed.…”
Section: Introductionmentioning
confidence: 99%