Thickness-Dependent Oscillatory Behavior of Resistivity and Hall Coefficient in Thin Single-Crystal Bismuth Films

Abstract

Articles you may be interested inThermodynamics and kinetic behaviors of thickness-dependent crystallization in high-k thin films deposited by atomic layer deposition J. Vac. Sci. Technol. A 33, 01A140 (2015); 10.1116/1.4903946 Thickness-dependent pinning in a superconductor thin filmMeasurements of electrical resistivity and Hall coefficient of single-crystal bismuth films evaporated on hot mica substrates, in the thickness range 25{}-1700 ..t, were made at room temperature and 90 o K.Resistivity and Hall coefficient of these films showed an oscillatory dependence on film thickness on account of the quantum size effect. The experimental period of the oscillations agrees with the theory of quantum size effect at these thicknesses. Detailed electron transmission studies were made to investigate the reported disagreement between experimental curves and theoretical predictions at small thicknesses. The role of structure on the behavior of resistivity and Hall coefficient of thinner films is discussed.

Burnout current density of bismuth nanowires

“…The conduction electrons possess a long mean free path l e ͑ϳ100 nm at room temperature 8 ͒ and also a large Fermi wavelength F ͑40-70 nm at room temperature͒. 9,10 In addition, the effective mass of the electrons can be as small as 1 1000 of the free electron mass depending on the crystalline orientation. 3 When the size of a specimen is comparable to l e and F , finite-size and quantum size effects are expected, respectively.…”

Finite- and Quantum-Size Effects of Bismuth Nanowires

“…For instance, the confinement of the electron gas in a low-dimensional system causes an oscillation of the electronic transport characteristics as a function of the structure size. Such kind of oscillations were found for bismuth thin films (Duggal & Rup, 1969), (Rogacheva et al, 2003) and very recently also for Bi nanowires by Farhangfar (Farhangfar, 2007) and Cornelius et al (Cornelius et al, 2008). Also, oscillations with diffreent periodicity and magnitude were reported for rectangular and cylindrical nanowires.…”

“…The electrons possess a large mean free path being in the range of 100 to 250 nm at room temperature that increases to the millimeter range at 4 K . Further, they exhibit a long Fermi wavelength of 40 to 70 nm (Garcia et al, 1972;Duggal & Rup, 1969) which is more than one order of magnitude larger than in typical metals. Since both intrinsic length scales (l e and λ F ) are large, finite-size as well as quantumsize effects can be investigated in comparatively large specimen.…”

“…25 meV which corresponds to kT at 300 K). A number of studies exist reporting QSE at room temperature for Bi thin films with thicknesses > 100 nm (Duggal & Rup, 1969;Rogacheva et al, 2003). Since nanowires confine the electronic wavefunction in two instead of only one dimension like in thin films, quantum size effects are expected to occur at diameters larger than the reported film thicknesses and, hence, QSE can be investigated in few hundred nanometer thick wires.…”

Thickness dependences of the thermoelectric properties of Bi thin films

“…In most of the previous works [5][6][7][8]151, the samples used were p-type Bi films, although bulk single crystals of Bi are normally n-type. The positive sign of the Hall coefficient in Bi films is usually attributed to the presence of localized surface acceptor states whose nature is not quite clear [5][6][7][8]151.…”