No abstract

No abstract

Articles you may be interested inThermodynamics and kinetic behaviors of thickness-dependent crystallization in high-k thin films deposited by atomic layer deposition J. Vac. Sci. Technol. A 33, 01A140 (2015); 10.1116/1.4903946 Thickness-dependent pinning in a superconductor thin filmMeasurements of electrical resistivity and Hall coefficient of single-crystal bismuth films evaporated on hot mica substrates, in the thickness range 25{}-1700 ..t, were made at room temperature and 90 o K.Resistivity and Hall coefficient of these films showed an oscillatory dependence on film thickness on account of the quantum size effect. The experimental period of the oscillations agrees with the theory of quantum size effect at these thicknesses. Detailed electron transmission studies were made to investigate the reported disagreement between experimental curves and theoretical predictions at small thicknesses. The role of structure on the behavior of resistivity and Hall coefficient of thinner films is discussed.

A comparative study of the physical properties of undoped, nonstoichiometric SnO, films on glass and quartz substrate is presented. With increasing film thickness, the crystallinity improves, the preferred orientation of the grains changes from the [loll to the [200] direction, and the carrier concentration decreases. The highest conductivity and mobility obtained are 2.5 x 10, W' cm-l and 13 cmZ/V s, respectively, for films on glass and 6.0 x 10' 0-' cmand 44 cm2/V s, respectively, for films on quartz substrate. It is indicated that the diffusion of alkali metal ions degrades the properties of the films deposited on glass substrate. The scattering mechanism in the films is also investigated. The figure of merit values obtained on glass (3.1 x a-') are amongst the highest values reported for undoped SnO, films. Es wird eine vergleichende Untersuchung der physikalischen Eigenschaften von undotierten, nichtstochiometrischen Sn0,-Schichten auf Glas-und Quarzsubstraten durchgefuhrt. Mit wachsender Schichtdicke verbessert sich die Kristallinitat, die bevorzugte Orientierung der Korner andert sich von der [loll-zur [200]-Richtung und die Tragerkonzentration nimmt ab. Die hochste erhaltene Leitfahigkeit und Beweglichkeit betragt 2,5 x 10' !X' cm-' bzw. 13 cmZ/V s fur Schichten auf Glas und 6,O x 10' Rcm-' bzw. 44 cmZ/V s fur Schichten auf Quarzsubstraten. Es wird gezeigt, daB die Diffusion von Alkalimetallionen die Eigenschaften der auf Glassubstrate abgeschiedenen Schichten degradiert. Der Streumechanismus in diesen Schichten wird ebenfalls untersucht. Die auf Glas (3,l x n-')-Substraten erhaltenen Wirkungsgrade liegen zwischen den hochsten fur undotierte Sn0,-Schichten angegebenen Werten.

No abstract