Band-gap narrowing and band structure in degenerate tin oxide (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">SnO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>) films

G, Sanon; Rup, Raj; Mansingh, Abhai

doi:10.1103/physrevb.44.5672

Cited by 210 publications

(103 citation statements)

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“…The values are in agreement with those reported in the literature for FTO. 9,46 The increase of m Ã versus n c indicates that the FTO conduction band has a non parabolic dispersion relation. Indeed, for degenerated semiconductors, the energy wave-vector relation is no longer parabolic.…”

Section: Determination Of the Effective Mass And Optical Mobilitymentioning

confidence: 99%

“…The Fermi level is located in the conduction band; and according to the Moss-Burstein effect, the optical bandgap energy is larger than 3.6 eV and strongly depends on the charge carrier density. 9,10 In order to improve solar cell efficiency, one parameter that needs to be optimized is the carrier mobility within the TCO. 11,12 To further improve the carrier mobility of FTO thin films, a fundamental understanding of the electron scattering mechanisms is a prerequisite condition.…”

Section: Introductionmentioning

confidence: 99%

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Electron scattering mechanisms in fluorine-doped SnO2 thin films

Rey

Ternon

Modreanu

et al. 2013

Journal of Applied Physics

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Polycrystalline fluorine-doped SnO2 (FTO) thin films have been grown by ultrasonic spray pyrolysis on glass substrate. By varying growth conditions, several FTO specimens have been deposited and the study of their structural, electrical, and optical properties has been carried out. By systematically investigating the mobility as a function of carrier density, grain size, and crystallite size, the contribution of each physical mechanism involved in the electron scattering has been derived. A thorough comparison of experimental data and calculations allows to disentangle these different mechanisms and to deduce their relative importance. In particular, the roles of extended structural defects such as grain or twin boundaries as revealed by electron microscopy or x-ray diffraction along with ionized impurities are discussed. As a consequence, based on the quantitative analysis presented here, an experimental methodology leading to the improvement of the electro-optical properties of FTO thin films is reported. FTO thin films assuming an electrical resistivity as low as 3.7 center dot 10(-4)Omega cm (square sheet resistance of 8 Omega/square) while retaining good transmittance up to 86% (including substrate effect) in the visible range have been obtained. (c) 2013 AIP Publishing LLC

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Section: Determination Of the Effective Mass And Optical Mobilitymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electron scattering mechanisms in fluorine-doped SnO2 thin films

Rey

Ternon

Modreanu

et al. 2013

Journal of Applied Physics

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“…14,15 At the same time, the optical band gap is enlarged comparing with that of pure SnO 2 (Burstein-Möss effect). [13][14][15] In addition, the conduction band of FTO is mainly composed of Sn 5s state. Hence FTO is a free-electron-like metal or, alternatively a highly degenerate semiconductor in energy bandstructure.…”

mentioning

confidence: 99%

“…[8][9][10][11] Although FTO film has been one of the major commercial TCO products, our current understanding of the origins for the combined properties of high electrical conductivity and high optical transparency of FTO film is mainly based on ab initio energy bandstructure calculations and optical properties measurements. 4,[12][13][14][15] Pure SnO 2 is a wide gap semiconductor with direct bandgap ∼3.6 eV and possesses high transmittance in visible light range. 12,13 The introduction of F ions causes the Fermi level to shift up into the conduction band and the degeneracy of the energy level.…”

mentioning

confidence: 99%

“…4,[12][13][14][15] Pure SnO 2 is a wide gap semiconductor with direct bandgap ∼3.6 eV and possesses high transmittance in visible light range. 12,13 The introduction of F ions causes the Fermi level to shift up into the conduction band and the degeneracy of the energy level. 14,15 At the same time, the optical band gap is enlarged comparing with that of pure SnO 2 (Burstein-Möss effect).…”

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Linear temperature behavior of thermopower and strong electron-electron scattering in thick F-doped SnO2 films

Lang

2014

Applied Physics Letters

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Both the semi-classical and quantum transport properties of F-doped SnO2 thick films (∼1 µm) were investigated experimentally. It is found that the resistivity caused by the thermal phonons obeys Bloch-Grüneisen law from ∼90 to 300 K, while only the diffusive thermopower, which varies linearly with temperature from 300 down to 10 K, can be observed.The phonon-drag thermopower is completely suppressed due to the long electron-phonon relaxation time in the compound. These observations, together with the temperature independent characteristic of carrier concentration, indicate that the conduction electron in F-doped SnO2 films behaves essentially like a free electron. At low temperatures, the electron-electron scattering dominates over the electron-phonon scattering and governs the inelastic scattering process. The theoretical predicated scattering rates for both large-and small-energy-transfer electron-electron scattering processes, which are negligibly weak in three-dimensional disordered conventional conductors, are quantitatively tested in this lower carrier concentration and free-electron-like highly degenerate semiconductor. Currently, both electrical conductivity and optical transparency in visible frequencies of FTO film are comparable to that of Sn-doped In 2 O 3 (ITO) film. 3,4 Comparing with the most widely used ITO film, FTO film has its own special advantages, such as chemically stable in acidic and basic solutions, 5 thermally stable in oxidizing environments at high temperatures, 6,7 and inexpensive (do not include rare elements). Hence FTO films are widely used in photoelectric and electro-optic devices, such as solar cells and flat panel displays. [8][9][10][11] Although FTO film has been one of the major commercial TCO products, our current understanding of the origins for the combined properties of high electrical conductivity and high optical transparency of FTO film is mainly based on ab initio energy bandstructure calculations and optical properties measurements. 4,12-15 Pure SnO 2 is a wide gap semiconductor with direct bandgap ∼3.6 eV and possesses high transmittance in visible light range. 12,13 The introduction of F ions causes the Fermi level to shift up into the conduction band and the degeneracy of the energy level. 14,15 At the same time, the optical band gap is enlarged comparing with that of pure SnO 2 (Burstein-Möss effect). [13][14][15] In addition, the conduction band of FTO is mainly composed of Sn 5s state. Hence FTO is a free-electron-like metal or, alternatively a highly degenerate semiconductor in energy bandstructure. 15 However, the free-electron-like feature of conduction electrons in FTO has not been tested experimentally. On the other side, the carrier concentrations in FTO films are often ∼10 20 cm 3 , 1,2 which is ∼2 to 3 orders of magnitude lower than that in typical metals. 16 The low-carrier-concentration metal characteristic of FTO may give us opportunities to test the validity of some theoretical predications that is difficult to be achieved in conventional metals...

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An ab initio study of oxygen vacancies and doping process of Nb and Cr atoms on TiO ₂ (110) surface models

Andrés

Beltrán

Sensato

et al. 1997

Int. J. Quantum Chem.

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Band-gap narrowing and band structure in degenerate tin oxide (SnO2) films

Cited by 210 publications

References 38 publications

Electron scattering mechanisms in fluorine-doped SnO2 thin films

Electron scattering mechanisms in fluorine-doped SnO2 thin films

Linear temperature behavior of thermopower and strong electron-electron scattering in thick F-doped SnO2 films

An ab initio study of oxygen vacancies and doping process of Nb and Cr atoms on TiO ₂ (110) surface models

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Band-gap narrowing and band structure in degenerate tin oxide (SnO2) films

Cited by 210 publications

References 38 publications

Electron scattering mechanisms in fluorine-doped SnO2 thin films

Electron scattering mechanisms in fluorine-doped SnO2 thin films

Linear temperature behavior of thermopower and strong electron-electron scattering in thick F-doped SnO2 films

An ab initio study of oxygen vacancies and doping process of Nb and Cr atoms on TiO 2 (110) surface models

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An ab initio study of oxygen vacancies and doping process of Nb and Cr atoms on TiO ₂ (110) surface models