Growth and characterization of tin oxide films prepared by chemical vapour deposition

G, Sanon; Rup, Raj; Mansingh, Abhai

doi:10.1016/0040-6090(89)90918-8

Cited by 208 publications

(71 citation statements)

References 30 publications

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“…However, as the doping concentration increases above 3 M%, the AZO resistivity also increases. This increase in resistivity is attributed to a decrease in the mobility of carriers resulted by ionized impurity scattering [22]. This agrees with that reported by other authors [21,23], where the excessive Al-doping deteriorates the properties of the AZO films due to the formation of stress by the smaller radius of Al …”

Section: +supporting

confidence: 82%

Semiconductor Materials by Ultrasonic Spray Pyrolysis and Their Application in Electronic Devices

Dominguez¹,

Luna-López²,

Flores³

2017

Pyrolysis

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Ultrasonic spray pyrolysis is a deposition technique that enables a fine mist of the precursor solution in order to deposit higher-density thin films. This characteristic makes of great potential the use of ultrasonically spray-deposited semiconductors films for lowcost, transparent, flexible and large-area applications. In this chapter, low-temperature deposition and characterization of ultrasonically spray-deposited zinc oxide (ZnO) films are presented. The ZnO films deposited by ultrasonic spray pyrolysis at 200°C were characterized by optical transmittance, photoluminescence spectroscopy, X-ray diffraction and Fourier transform infrared spectroscopy. The study of low-temperature annealing of ZnO films is also presented. Moreover, the characterization of aluminum-doped ZnO films deposited by ultrasonic spray pyrolysis at 200°C is presented. Finally, applications of these ultrasonic spray-deposited films in electronic devices are presented.

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Section: +supporting

confidence: 82%

Semiconductor Materials by Ultrasonic Spray Pyrolysis and Their Application in Electronic Devices

Dominguez¹,

Luna-López²,

Flores³

2017

Pyrolysis

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“…The average grain size in the films can be estimated by Scherrer Formula. 13 These calculated results are shown in Fig. 2 and Table I.…”

Section: −2mentioning

confidence: 79%

Influence of oxygen partial pressure on the microstructural and magnetic properties of Er-doped ZnO thin films

Chen

Liu

et al. 2015

AIP Advances

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Er-doped ZnO thin films have been prepared by using inductively coupled plasma enhanced physical vapor deposition at different O2:Ar gas flow ratio (R = 0:30, 1:30, 1:15, 1:10 and 1:6). The influence of oxygen partial pressure on the structural, optical and magnetic properties was studied. It is found that an appropriate oxygen partial pressure (R=1:10) can produce the best crystalline quality with a maximum grain size. The internal strain, estimated by fitting the X-ray diffraction peaks, varied with oxygen partial pressure during growth. PL measurements show that plenty of defects, especially zinc vacancy, exist in Er-doped ZnO films. All the samples show room-temperature ferromagnetism. Importantly, the saturation magnetization exhibits similar dependency on oxygen partial pressure with the internal strain, which indicates that internal strain has an important effect on the magnetic properties of Er-doped ZnO thin films.

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“…Figure 7 show the variation of full width at half maximum (FWHM) of (0 0 2) peak and crystallite size of ZnO:Al films deposited on polyimide substrate as a function of film thickness. The crystallite sizes of films were calculated by using Scherrer's formula [20,21]. As the thickness increases from 200 nm to 1.3 μm, the FWHM decreases from 0.25°to 0.12°and the crystallite size enlarge.…”

Section: Resultsmentioning

confidence: 99%

Effects of sputtering pressure and thickness on properties of ZnO:Al films deposited on polymer substrates

Lee

2008

J Electroceram

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Highly conducting and transparent aluminum doped zinc oxide (ZnO:Al) thin films have been deposited on polyimide substrate by r.f. magnetron sputtering at room temperature. The influence of sputter pressure and thickness on the structural, electrical, and optical properties of ZnO: Al films deposited on polyimide substrate is reported. The crystallinity and degree of orientation was increased by decreasing the sputter pressure. For higher sputtering pressures an increase on the resistivity was observed due to a decrease on the mobility and the carrier concentration. As the film thickness was increased, the crystallite sizes were increased, but the average transmittance in the wavelength range of the visible spectrum was decreased. The electrical performances of the ZnO:Al films deposited on glass substrates are slightly worse than the ones of the films deposited on polyimide substrates with same thickness. The lowest resistivity of 8.6×10 −4 Ω cm can be obtained for films deposited on glass substrate with the thickness of 800 nm.

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Growth and characterization of tin oxide films prepared by chemical vapour deposition

Cited by 208 publications

References 30 publications

Semiconductor Materials by Ultrasonic Spray Pyrolysis and Their Application in Electronic Devices

Semiconductor Materials by Ultrasonic Spray Pyrolysis and Their Application in Electronic Devices

Influence of oxygen partial pressure on the microstructural and magnetic properties of Er-doped ZnO thin films

Effects of sputtering pressure and thickness on properties of ZnO:Al films deposited on polymer substrates

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