Thickness effects on the electrical characteristics of Ba0.7Sr0.3TiO3 capacitors with nano-Cr interlayer

Abstract

structure was sputtered sequentially onto Pt/ Ti/ SiO 2 / Si substrate. With the insertion of a 2 nm Cr interlayer, the temperature coefficient of capacitance of the BST/Cr/BST dielectric is about 69% lower than that of BST monolayer dielectric. The dielectric constant and dissipation factor as the function of Cr thickness are studied. X-ray diffraction patterns, the analysis results of energy dispersive spectroscopy, and the survey scan profiles of Auger electron spectroscopy reveal the formation of a TiO 2 secondary phase after the multilayer is annealed at 800°C in O 2 atmosphere. The insertion of nano-Cr interlayer improves the electrical properties of BST capacitors.

Microstructure and antiferroelectric-like behavior of PbxSr1−xTiO3 ceramics

“…At present, materials such as Ba x Sr 1−x TiO 3 (BST), BaZr x Ti 1−x O 3 (BZT), PbZr x Ti 1−x O 3 (PZT), and Pb 1−x Ba x TiO 3 (PBT) systems have been intensively investigated [7][8][9][10][11][12][13]. Recently, Somiya et al [14] reported that Pb x Sr 1−x TiO 3 (PST) has better properties than BST.…”

Improvement of Electrical Properties of $\hbox{Ba}_{{\bf 0.7}}\hbox{Sr}_{\bf 0.3}\hbox{TiO}_{\bf 3}$ Capacitors With an Inserted Nano-Cr Interlayer

“…1(b)-(e). Our previous work suggests that a β-TiO 2 secondary phase is formed after the BST/Cr/BST dielectrics are annealed in O 2 for 1 h [7], [8]. Hence, the thin layer on top of the BST is TiO 2 .…”

Structural and physical properties of Ba0.6Sr0.4TiO3 film prepared by pulsed laser deposition in a mixture of argon and oxygen

“…[4][5][6] Normally, compared with the bulk materials, the quality of crystallization of the film is poorer, dielectric loss is higher, leakage current is bigger. Therefore, many researchers have studied the influence of deposition method, 7-10 deposition temperature, 11,12 film thickness, 13,14 and different substrates 15 on Ba x Sr 1−x TiO 3 film fabrication, so that the property of the Ba x Sr 1−x TiO 3 film capacitor has been modified for tunable microwave device applications. As one of the most commonly used deposition methods in preparing oxide films, pulsed laser deposition (PLD) usually uses oxygen as ambient gas to avoid oxygen vacancies.…”